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SST25WF010-40-5I-SAE Datasheet(PDF) 1 Page - Silicon Storage Technology, Inc |
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SST25WF010-40-5I-SAE Datasheet(HTML) 1 Page - Silicon Storage Technology, Inc |
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1 / 32 page  ©2009 Silicon Storage Technology, Inc. S71328-08-000 11/09 1 The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. Data Sheet FEATURES: • Single Voltage Read and Write Operations – 1.65-1.95V • Serial Interface Architecture – SPI Compatible: Mode 0 and Mode 3 • High Speed Clock Frequency –40MHz • Superior Reliability – Endurance: 100,000 Cycles – Greater than 100 years Data Retention • Ultra-Low Power Consumption: – Active Read Current: 2 mA (typical @ 20MHz) – Standby Current: 2 µA (typical) • Flexible Erase Capability – Uniform 4 KByte sectors – Uniform 32 KByte overlay blocks – Uniform 64 KByte overlay blocks (2 Mbit and 4 Mbit only) • Fast Erase and Byte-Program: – Chip-Erase Time: 125 ms (typical) – Sector-/Block-Erase Time: 62ms (typical) – Byte-Program Time: 50 µS (typical) • Auto Address Increment (AAI) Programming – Decrease total chip programming time over Byte-Program operations • End-of-Write Detection – Software polling the BUSY bit in Status Register – Busy Status readout on SO pin • Reset Pin (RST#) or Programmable Hold Pin (HOLD#) option – Hardware Reset pin as default – Hold pin option to suspend a serial sequence without deselecting the device • Write Protection (WP#) – Enables/Disables the Lock-Down function of the status register • Software Write Protection – Write protection through Block-Protection bits in status register • Temperature Range – Industrial: -40°C to +85°C • Packages Available – 8-lead SOIC (150 mils) – 8-contact WSON (5mm x 6mm) • All non-Pb (lead-free) devices are RoHS compliant PRODUCT DESCRIPTION The SST25WF512, SST25WF010, SST25WF020, and SST25WF040 are members of the Serial Flash 25 Series family and feature a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. SST25WF512/010/020/040 SPI serial flash memories are manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST25WF512/010/020/040 devices significantly improve performance and reliability, while lowering power consumption. The devices write (Program or Erase) with a single power supply of 1.65-1.95V for SST25WF512/010/ 020/040. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program oper- ation is less than alternative flash memory technologies. The SST25WF512/010/020/040 devices are offered in both 8-lead SOIC and an 8-contact WSON packages. See Figure 2 for the pin assignment. 512 Kbit / 1 Mbit / 2 Mbit / 4Mbit 1.8V SPI Serial Flash SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040 SST25VF016B16Mb Serial Peripheral Interface (SPI) flash memory |
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