©2006 Silicon Storage Technology, Inc.

S71231(04)-01-EOL

09/10

1

The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

EOL Product Data Sheet

FEATURES:

•

Single 2.7-3.6V Read and Write Operations

•

Serial Interface Architecture

– SPI Compatible: Mode 0 and Mode 3

•

20 MHz Max Clock Frequency

•

Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

•

Low Power Consumption:

– Active Read Current: 7 mA (typical)

– Standby Current: 8 µA (typical)

•

Flexible Erase Capability

– Uniform 4 KByte sectors

– Uniform 32 KByte overlay blocks

•

Fast Erase and Byte-Program:

– Chip-Erase Time: 70 ms (typical)

– Sector- or Block-Erase Time: 18 ms (typical)

– Byte-Program Time: 14 µs (typical)

•

Auto Address Increment (AAI) Programming

– Decrease total chip programming time over

Byte-Program operations

•

End-of-Write Detection

– Software Status

•

Hold Pin (HOLD#)

– Suspends a serial sequence to the memory

without deselecting the device

•

Write Protection (WP#)

– Enables/Disables the Lock-Down function of the

status register

•

Software Write Protection

– Write protection through Block-Protection bits in

status register

•

Temperature Range

– Commercial: 0°C to +70°C

– Industrial: -40°C to +85°C

– Extended: -20°C to +85°C

•

Packages Available

– 8-lead SOIC 200 mil body width

– 8-contact WSON (5mm x 6mm)

•

All non-Pb (lead-free) devices are RoHS compliant

PRODUCT DESCRIPTION

The SST serial flash family features a four-wire, SPI-

compatible interface that allows for a low pin-count pack-

age occupying less board space and ultimately lowering

total system costs. SST25VF040 SPI serial flash memo-

ries are manufactured with SST proprietary, high perfor-

mance CMOS SuperFlash Technology. The split-gate

cell design and thick-oxide tunneling injector attain better

reliability and manufacturability compared with alternate

approaches.

The SST25VF040 device significantly improves perfor-

mance, while lowering power consumption. The total

energy consumed is a function of the applied voltage, cur-

rent, and time of application. Since for any given voltage

range, the SuperFlash technology uses less current to

program and has a shorter erase time, the total energy

consumed during any Erase or Program operation is less

than

alternative

flash

memory

technologies.

The

SST25VF040 device operates with a single 2.7-3.6V

power supply.

The SST25VF040 device is offered in an 8-lead SOIC 200

mil body width (S2A) package and in an 8-contact WSON

package. See Figure 2 for the pin assignments.

4 Mbit SPI Serial Flash

SST25VF040

SST25VF020 / 0402Mb / 4Mb Serial Peripheral Interface (SPI) flash memory