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R5F357C6KFB Datasheet(PDF) 87 Page - Renesas Technology Corp

Part No. R5F357C6KFB
Description  RENESAS MCU
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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R5F357C6KFB Datasheet(HTML) 87 Page - Renesas Technology Corp

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REJ03B0267-0101
Rev.1.01
Page 87 of 156
Jul 23, 2010
M16C/5M Group, M16C/57 Group
5. Electrical Characteristics
J-Version
Notes:
1.
Definition of program and erase cycles:
The program and erase cycles refer to the number of per-block erasures. If the program and erase cycles are n
(n = 1,000), each block can be erased n times. For example, if a 64 Kbyte block is erased after writing two word
data 16,384 times, each to a different address, this counts as one program and erase cycles. Data cannot be
written to the same address more than once without erasing the block (rewrite prohibited).
2.
Cycles to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
3.
In a system that executes multiple programming operations, the actual erasure count can be reduced by writing
to sequential addresses in turn so that as much of the block as possible is used up before performing an erase
operation. It is advisable to retain data on the erasure cycles of each block and limit the number of erase
operations to a certain number.
4.
If an error occurs during block erase, attempt to execute the clear status register command, then execute the
block erase command at least three times until the erase error does not occur.
5.
Customers desiring program/erase failure rate information should contact a Renesas Electronics sales office.
6.
The data hold time includes time that the power supply is off or the clock is not supplied.
7.
After an erase start or erase restart, if an interval of at least 20 ms is not set before the next suspend request, the
erase sequence cannot be completed.
Table 5.7
Flash Memory (Program ROM 1, 2) Electrical Characteristics
VCC = 3.0 to 5.5 V at Topr = 0°C to 60°C, unless otherwise specified.
Symbol
Parameter
Conditions
Standard
Unit
Min.
Typ.
Max.
-
Program/erase cycles (1, 3, 4)
VCC = 3.3 V, Topr = 25°C
1,000 (2)
times
-
Two words program time
VCC = 3.3 V, Topr = 25°C
150
4000
μs
Lock bit program time
VCC = 3.3 V, Topr = 25°C
70
3000
μs
-
Block erase time
VCC = 3.3 V, Topr = 25°C
0.2
3.0
s
td(SR-SUS)
Time delay from suspend request
until suspend
ms
-
Interval from erase start/restart
until following suspend request
0
μs
-
Suspend interval necessary for
auto-erasure to complete (7)
20
ms
-
Time from suspend until erase
restart
μs
-
Program, erase voltage
3.0
5.5
V
-
Read voltage
Topr = -40
°C to 85°C
3.0
5.5
V
-
Program, erase temperature
0
60
°C
tPS
Flash Memory Circuit Stabilization Wait Time
50
μs
-
Data hold time (6)
Ambient temperature = 55
°C
20
year
5
3
f BCLK
()
----------------
+
30
1
f BCLK
()
----------------
+


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