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74LVC2G66GD Datasheet(PDF) 7 Page - NXP Semiconductors |
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74LVC2G66GD Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 26 page 74LVC2G66 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 5 — 16 June 2010 7 of 26 NXP Semiconductors 74LVC2G66 Bilateral switch 10.2 ON resistance [1] Typical values are measured at Tamb = 25 °C and nominal VCC. [2] Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical VCC and temperature. Table 8. ON resistance At recommended operating conditions; voltages are referenced to GND (ground 0 V); for graphs see Figure 11 to Figure 16. Symbol Parameter Conditions −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ[1] Max Min Max RON(peak) ON resistance (peak) VI =GND to VCC; see Figure 10 ISW =4mA; VCC =1.65Vto 1.95 V -34.0 130 - 195 Ω ISW =8mA; VCC = 2.3 V to 2.7 V - 12.0 30 - 45 Ω ISW =12mA; VCC = 2.7 V - 10.4 25 - 38 Ω ISW =24mA; VCC = 3.0 V to 3.6 V - 7.8 20 - 30 Ω ISW =32mA; VCC = 4.5 V to 5.5 V - 6.2 15 - 23 Ω RON(rail) ON resistance (rail) VI = GND; see Figure 10 ISW =4mA; VCC =1.65Vto 1.95 V -8.2 18 - 27 Ω ISW =8mA; VCC = 2.3 V to 2.7 V - 7.1 16 - 24 Ω ISW =12mA; VCC = 2.7 V - 6.9 14 - 21 Ω ISW =24mA; VCC = 3.0 V to 3.6 V - 6.5 12 - 18 Ω ISW =32mA; VCC = 4.5 V to 5.5 V - 5.8 10 - 15 Ω VI =VCC; see Figure 10 ISW =4mA; VCC =1.65Vto 1.95 V -10.4 30 - 45 Ω ISW =8mA; VCC = 2.3 V to 2.7 V - 7.6 20 - 30 Ω ISW =12mA; VCC = 2.7 V - 7.0 18 - 27 Ω ISW =24mA; VCC = 3.0 V to 3.6 V - 6.1 15 - 23 Ω ISW =32mA; VCC = 4.5 V to 5.5 V - 4.9 10 - 15 Ω RON(flat) ON resistance (flatness) VI =GND to VCC [2] ISW =4mA; VCC =1.65Vto 1.95 V -26.0 - - - Ω ISW =8mA; VCC = 2.3 V to 2.7 V - 5.0 - - - Ω ISW =12mA; VCC =2.7 V - 3.5 - - - Ω ISW =24mA; VCC = 3.0 V to 3.6 V - 2.0 - - - Ω ISW =32mA; VCC = 4.5 V to 5.5 V - 1.5 - - - Ω |
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