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R5F64188HPFB Datasheet(PDF) 88 Page - Renesas Technology Corp

Part No. R5F64188HPFB
Description  RENESAS MCU
Download  126 Pages
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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R5F64188HPFB Datasheet(HTML) 88 Page - Renesas Technology Corp

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REJ03B0255-0110
Rev.1.10
Page 88 of 123
Jun 23, 2010
R32C/118 Group
5. Electrical Characteristics
Notes:
1.
Program/erase definition
This value represents the number of erasures per block.
If the flash memory is programmed/erased n times, each block can be erased n times.
i.e. If 4-word write is performed in 512 different addresses in the block A of 4 Kbyte and then the
block is erased, it is considered the programming/erasure is performed just once.
However a write in the same address more than once for one erasure is disabled (overwrite
disabled).
2.
The data retention time includes the periods when the supply voltage is not applied and no clock is
provided.
3.
Please contact a Renesas Electronics sales office regarding data retention time other than the
above.
Table 5.7
RAM Electrical Characteristics
(VCC = 3.0 to 5.5 V, VSS =0V, and Ta = Topr, unless otherwise noted)
Symbol
Characteristic
Measurement
condition
Value
Unit
Min.
Typ.
Max.
VRDR
RAM data retention voltage
in stop mode
2.0
V
Table 5.8
Flash Memory Electrical Characteristics
(VCC = 3.0 to 5.5 V, VSS =0V, and Ta = Topr, unless otherwise noted)
Symbol
Characteristic
Value
Unit
Min.
Typ.
Max.
Programming and erasure endurance of flash
memory (1)
Program area
1000
times
Data area
10000
times
4-word program time
Program area
150
900
µs
Data area
300
1700
µs
Lock bit-program time
Program area
70
500
µs
Data area
140
1000
µs
Block erasure time
4 Kbyte block
0.12
3.0
s
32 Kbyte block
0.17
3.0
s
64 Kbyte block
0.20
3.0
s
Data retention (2)
Ta = 55°C (3)
10
years


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