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RJK5015DPK-00-T0 Datasheet(PDF) 4 Page - Renesas Technology Corp |
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RJK5015DPK-00-T0 Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page RJK5015DPK Preliminary REJ03G1360-0300 Rev.3.00 Page 4 of 6 Jun 30, 2010 1 3 10 30 100 300 1000 1000 200 500 100 20 50 10 2 5 1 0 100 200 300 30000 10000 100000 1000 3000 800 0 16 600 12 400 8 200 4 20 40 60 80 100 0 300 100 30 10 VGS = 0 f = 1 MHz Ciss Coss Crss ID = 25 A VDS VGS Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nC) Dynamic Input Characteristics di / dt = 100 A / μs VGS = 0, Ta = 25°C VDD = 100 V 250 V 400 V VDD = 400 V 250 V 100 V 0 0.4 0.8 1.2 1.6 2.0 50 20 Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage Pulse Test 5 4 3 2 1 -25 0 50 100 150 25 125 75 0 Case Temperature Tc ( °C) Gate to Source Cutoff Voltage vs. Case Temperature VDS = 10 V ID = 10 mA 1 mA 0.1 mA 10 30 40 VGS = 0 V, −5 V 5 V, 10 V |
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