RJK5012DPP-00-T2 datasheet(2/7 Pages) RENESAS

Part #	RJK5012DPP-00-T2

Description	Silicon N Channel MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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RJK5012DPP

Preliminary

REJ03G1545-0200 Rev.2.00

Page 2 of 6

Jun 30, 2010

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown voltage

V(BR)DSS

500

—

V

ID = 10 mA, VGS = 0

Zero gate voltage drain current

IDSS

—

1

A

VDS = 500 V, VGS = 0

Gate to source leak current

IGSS

—

0.1

A

VGS = 30 V, VDS = 0

Gate to source cutoff voltage

VGS(off)

3.0

—

4.5

V

VDS = 10 V, ID = 1 mA

Static drain to source on state

resistance

RDS(on)

—

0.515

0.620



ID = 6 A, VGS = 10 V

Note5

Input capacitance

Ciss

—

1100

—

pF

Output capacitance

Coss

—

120

—

pF

Reverse transfer capacitance

Crss

—

15

—

pF

VDS = 25 V

VGS = 0

f = 1 MHz

Turn-on delay time

td(on)

—

30

—

ns

Rise time

tr

—

23

—

ns

Turn-off delay time

td(off)

—

77

—

ns

Fall time

tf

—

16

—

ns

ID = 6 A

VGS = 10 V

RL = 41.6 

Rg = 10



Total gate charge

Qg

—

29

—

nC

Gate to source charge

Qgs

—

5.5

—

nC

Gate to drain charge

Qgd

—

13

—

nC

VDD = 400 V

VGS = 10 V

ID = 12 A

Body-drain diode forward voltage

VDF

—

0.89

1.50

V

IF = 12 A, VGS = 0

Note5

Body-drain diode reverse recovery time

trr

—

280

—

ns

IF = 12 A, VGS = 0

diF/dt = 100 A/s

Notes: 5. Pulse test

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