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RJK5003DPD-00-J2 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RJK5003DPD-00-J2
Description  Silicon N Channel Power MOS FET High Speed Power Switching Use
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK5003DPD-00-J2 Datasheet(HTML) 3 Page - Renesas Technology Corp

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RJK5003DPD
Preliminary
R07DS0049EJ0400 Rev.4.00
Page 3 of 6
Jul 22, 2010
Main Characteristics
0
2
4
6
8
10
04
8
12
16
20
0
1
2
3
4
5
02
4
6
8
10
Power vs. Temperature Derating
Case Temperature Tc (°C)
Maximum Safe Operating Area
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Drain to Source Voltage VDS (V)
0
10
20
30
40
50
60
70
0
50
100
150
200
PDS = 62.5 W
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
5 V
5 V
4V
10 V
7 V
VGS = 20 V
6 V
10 V
7 V
VGS = 20 V
6 V
4 V
0
4
8
12
16
20
0
4
8
12
16
20
0
0.8
1.6
2.4
3.2
4
Drain to Source Saturation Voltage vs.
Gate to Source Voltage (Typical)
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance vs.
Drain Current (Typical)
Drain Current ID (A)
ID = 8 A
Tc = 25°C
Pulse Test
5 A
3 A
VGS = 10 V
20 V
Tc = 25°C
Pulse Test
100
10–1
101
102
0.01
0.1
1
10
100
1
10
100
1000
PW
=
10
μs
100
μs
DC
Tc = 25
°C
Single pulse
Operation in this area is
limited by RDS(on)


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