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RJK2511DPK Datasheet(PDF) 4 Page - Renesas Technology Corp |
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RJK2511DPK Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page RJK2511DPK Preliminary REJ03G1486-0500 Rev.5.00 Page 4 of 6 Jun 30, 2010 0.1 0.08 0.06 0.04 0.02 −25 02550 75 100 125 150 0 0.3 0.1 3 30 100 100 30 10 3 1 0.3 0.1 110 Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Temperature Drain Current ID (A) Forward Transfer Admittance vs. Drain Current VGS = 10 V Pulse Test 0.1 0.3 1.0 3 10 30 100 1000 200 500 100 20 50 10 2 5 1 0 50 100 150 30000 10000 100000 1000 3000 400 0 16 300 12 200 8 100 4 40 80 120 160 200 0 10000 1000 10 100 0.1 0.3 1 3 10 30 100 300 100 30 10 VGS = 0 f = 1 MHz Ciss Coss Crss ID = 65 A VDS VGS Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nC) Dynamic Input Characteristics Drain Current I D (A) Switching Characteristics di / dt = 100 A / μs VGS = 0, Ta = 25°C VDD = 200 V 100 V 50 V td(on) td(off) td(off) VDD = 200 V 100 V 50 V tr tr tf tf 10 A 32.5 A ID = 65 A Tc = −25°C 25 °C 75 °C VDS = 10 V Pulse Test VGS = 10 V, VDD = 125 V PW = 5 μs, duty ≤ 1 % RG = 10 Ω |
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