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RJK0653DPB-00-J5 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # RJK0653DPB-00-J5
Description  Silicon N Channel Power MOS FET Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK0653DPB-00-J5 Datasheet(HTML) 4 Page - Renesas Technology Corp

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RJK0653DPB
Preliminary
R07DS0078EJ0102 Rev.1.02
Page 4 of 6
Jul 30, 2010
Case Temperature
Tc
(°C)
Static Drain to Source on State Resistance
vs. Temperature
10
8
6
4
2
–25
0
25
50
75
100 125
150
0
Source to Drain Voltage VSD (V)
Reverse Drain Current vs.
Source to Drain Voltage
Channel Temperature Tch (
°C)
Maximum Avalanche Energy vs.
Channel Temperature Derating
50
40
30
20
10
25
50
75
100
125
150
0
50
40
30
20
10
0
0.4
0.8
1.2
1.6
2.0
Pulse Test
5 V
VGS = 0, –5V
10 V
IAP = 22.5 A
VDD = 20 V
duty < 0.1 %
Rg
≥ 50 Ω
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
020
50
40
10
30
10000
3000
1000
300
100
Gate Charge
Qg (nc)
Dynamic Input Characteristics
100
80
60
40
20
0
20
16
12
8
4
20
40
60
80
100
0
0
VGS = 4.5 V
10 V
Pulse Test
ID = 22.5 A
VGS = 0
f = 1 MHz
Crss
Coss
Ciss
ID = 45 A
VGS
VDS
VDD = 50 V
25 V
10 V
VDD = 10 V
25 V
50 V


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