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RJK0451DPB Datasheet(PDF) 3 Page - Renesas Technology Corp |
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RJK0451DPB Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 7 page RJK0451DPB Preliminary R07DS0073EJ0102 Rev.1.02 Page 3 of 6 Jul 30, 2010 Main Characteristics Drain to Source Voltage VDS (V) Typical Output Characteristics Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Gate to Source Voltage VGS (V) Typical Transfer Characteristics Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current 50 40 30 20 10 0 2 468 10 50 40 30 20 10 0 12 3 4 5 Tc = 75 °C 25 °C –25 °C VDS = 10 V Pulse Test 10 0.1 1 1 10 100 1000 250 200 150 100 50 0 4 8 12 16 20 Pulse Test ID = 20 A 10 A 100 VGS = 4.5 V 10 V Pulse Test 5 A Case Temperature Tc (°C) Power vs. Temperature Derating 80 60 40 20 0 50 100 150 200 Drain to Source Voltage VDS (V) Maximum Safe Operation Area 0.1 1 10 100 10 100 1000 1 0.1 PW = 10 ms Operation in this area is limited by RDS(on) Tc = 25 °C 1 shot Pulse 10 μs VGS = 2.6 V Pulse Test 2.8 V 3.0 V 10 V 3.2 V 4.5 V |
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