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RJK0212DPA-00-J53 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJK0212DPA-00-J53 Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 4 page REJ03G1950-0011 Rev.0.11 Page 1 of 3 Jul 02, 2010 Preliminary Datasheet RJK0212DPA Silicon N Channel Power MOS FET Power Switching Features Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) G D SS S DD D 4 12 3 56 7 8 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 8 7 6 5 2 1 3 4 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 25 V Gate to source voltage VGSS +16, –12 V Drain current ID 25 A Drain peak current ID(pulse) Note1 100 A Body-drain diode reverse drain current IDR 25 A Avalanche current IAP Note 2 16 A Avalanche energy EAR Note 2 32 mJ Channel dissipation Pch Note3 30 W Channel to case thermal resistance ch-c Note3 4.17 C/W Channel temperature Tch 150 C Storage temperature Tstg –55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25 C, Rg 50 3. Tc = 25 C REJ03G1950-0011 Rev.0.11 Jul 02, 2010 |
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