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R5F213J5TNNP Datasheet(PDF) 30 Page - Renesas Technology Corp

Part No. R5F213J5TNNP
Description  RENESAS MCU
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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R5F213J5TNNP Datasheet(HTML) 30 Page - Renesas Technology Corp

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REJ03B0320-0010 Rev.0.10
Page 30 of 47
Jul 12, 2010
R8C/3JT Group
5. Electrical Characteristics
Under development Preliminary document
Specifications in this document are tentative and subject to change.
Notes:
1. Vcc = 2.7 V to 5.5 V at Topr = 0
°C to 60°C, unless otherwise specified.
2. Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 1,000), each block can be erased n times. For example, if 1,024 1-byte
writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is erased, the
programming/erasure endurance still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erasure endurance of each block and limit
the number of erase operations to a certain number.
5. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
command at least three times until the erase error does not occur.
6. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
7. The data hold time includes time that the power supply is off or the clock is not supplied.
Table 5.4
Flash Memory (Program ROM) Electrical Characteristics
Symbol
Parameter
Conditions
Standard
Unit
Min.
Typ.
Max.
Program/erase endurance (2)
1,000 (3)
——
times
Byte program time
80
500
µs
Block erase time
0.3
s
td(SR-SUS)
Time delay from suspend request until
suspend
5 + CPU clock
× 3 cycles
ms
Interval from erase start/restart until
following suspend request
0—
µs
Time from suspend until erase restart
30 + CPU clock
× 1 cycle
µs
td(CMDRST
-READY)
Time from when command is forcibly
terminated until reading is enabled
30 + CPU clock
× 1 cycle
µs
Program, erase voltage
2.7
5.5
V
Read voltage
1.8
5.5
V
Program, erase temperature
0
60
°C
Data hold time (7)
Ambient temperature = 55
°C
20
year


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