 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
R5F213J5TNNP Datasheet(PDF) 43 Page - Renesas Technology Corp |
|
||||||||||||||||||||||||||||||
R5F213J5TNNP Datasheet(HTML) 43 Page - Renesas Technology Corp |
|
|
43 / 50 page 
REJ03B0320-0010 Rev.0.10 Page 43 of 47 Jul 12, 2010 R8C/3JT Group 5. Electrical Characteristics Under development Preliminary document Specifications in this document are tentative and subject to change. Note: 1. 1.8 V ≤ Vcc < 2.7 V at Topr = −20°C to 85°C (N version)/−40°C to 85°C (D version), f(XIN) = 5 MHz, unless otherwise specified. Table 5.25 Electrical Characteristics (5) [1.8 V ≤ Vcc < 2.7 V] Symbol Parameter Condition Standard Unit Min. Typ. Max. VOH Output “H” voltage Other than XOUT Drive capacity High IOH = −2 mA Vcc − 0.5 — Vcc V Drive capacity Low IOH = −1 mA Vcc − 0.5 — Vcc V XOUT IOH = −200 µA1.0 — Vcc V VOL Output “L” voltage Other than XOUT Drive capacity High IOL = 2 mA — — 0.5 V Drive capacity Low IOL = 1 mA — — 0.5 V XOUT IOL = 200 µA— — 0.5 V VT+-VT- Hysteresis INT0, INT1, INT2, INT3, KI0, KI1, KI2, KI3, TRAIO, TRBO, TRCIOA, TRCIOB, TRCIOC, TRCIOD, TRCTRG, TRCCLK, ADTRG, RXD0, RXD2, CLK0, CLK2, SCL2, SDA2 0.05 0.20 — V RESET 0.05 0.20 — V IIH Input “H” current VI = 2.2 V, Vcc = 2.2 V — — 4.0 µA IIL Input “L” current VI = 0 V, Vcc = 2.2 V — — −4.0 µA RPULLUP Pull-up resistance VI = 0 V, Vcc = 2.2 V 70 140 300 k Ω RfXIN Feedback resistance XIN — 0.3 — M Ω VRAM RAM hold voltage During stop mode 1.8 — — V |
|
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
