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R5F213J5TNNP Datasheet(PDF) 39 Page - Renesas Technology Corp

Part No. R5F213J5TNNP
Description  RENESAS MCU
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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R5F213J5TNNP Datasheet(HTML) 39 Page - Renesas Technology Corp

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REJ03B0320-0010 Rev.0.10
Page 39 of 47
Jul 12, 2010
R8C/3JT Group
5. Electrical Characteristics
Under development Preliminary document
Specifications in this document are tentative and subject to change.
Note:
1. 2.7 V
≤ Vcc < 4.2 V at Topr = −20°C to 85°C (N version)/−40°C to 85°C (D version), f(XIN) = 10 MHz, unless otherwise
specified.
Table 5.19
Electrical Characteristics (3) [2.7 V
≤ Vcc < 4.2 V]
Symbol
Parameter
Condition
Standard
Unit
Min.
Typ.
Max.
VOH
Output “H”
voltage
Other than XOUT
Drive capacity High
IOH =
−5 mA
Vcc
− 0.5
Vcc
V
Drive capacity Low
IOH =
−1 mA
Vcc
− 0.5
Vcc
V
XOUT
IOH =
−200 µA1.0
Vcc
V
VOL
Output “L”
voltage
Other than XOUT
Drive capacity High
IOL = 5 mA
0.5
V
Drive capacity Low
IOL = 1 mA
0.5
V
XOUT
IOL = 200
µA—
0.5
V
VT+-VT-
Hysteresis
INT0, INT1,
INT2, INT3,
KI0, KI1, KI2, KI3,
TRAIO, TRBO,
TRCIOA, TRCIOB,
TRCIOC, TRCIOD,
TRCTRG, TRCCLK,
ADTRG,
RXD0, RXD2, CLK0,
CLK2, SCL2, SDA2
Vcc = 3.0 V
0.1
0.4
V
RESET
Vcc = 3.0 V
0.1
0.5
V
IIH
Input “H” current
VI = 3 V, Vcc = 3.0 V
4.0
µA
IIL
Input “L” current
VI = 0 V, Vcc = 3.0 V
−4.0
µA
RPULLUP
Pull-up resistance
VI = 0 V, Vcc = 3.0 V
42
84
168
k
RfXIN
Feedback
resistance
XIN
0.3
M
VRAM
RAM hold voltage
During stop mode
1.8
V


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