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R5F35M86JFF Datasheet(PDF) 89 Page - Renesas Technology Corp |
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R5F35M86JFF Datasheet(HTML) 89 Page - Renesas Technology Corp |
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89 / 159 page 
REJ03B0267-0101 Rev.1.01 Page 89 of 156 Jul 23, 2010 M16C/5M Group, M16C/57 Group 5. Electrical Characteristics J-Version 5.1.6 E2PROM Emulation Data Flash Notes: 1. Definition of program/erase cycles definition This value represents the number of erasure per block. If the flash memory is programmed/erased n times, each block can be erased n times. i.e. If a word write is performed in different 16 addresses in a block and then the block is erased, it is considered the programming/erasure is performed just once. However a write in the same address more than once for one erasure is disabled. (overwrite disabled). 2. The data hold time includes the periods when the supply voltage is not applied and no clock is provided. 3. This data hold time includes (7000) hours in Ambient temperature = 85°C. 4. Please contact a Renesas Electronics sales office regarding data retention time other than the above. Table 5.9 E2PROM Emulation Data Flash Electrical Characteristics VCC = 3.0 to 5.5 V, VSS = 0 V, and Topr = -40°C to 85°C unless otherwise specified. Symbol Characteristic Value Unit Min. Typ. Max. — Program/erase cycles (1) 100000 times — Word program time (2-byte program) 100 2000 µs — Read time (2-byte read) 1 µs — Block erase time (32-byte block) 15 200 ms tPS Flash memory circuit stabilization wait time (sleep mode to normal mode) 50 µs — Data hold time (2) Ambient temperature = 55°C (3, 4) 20 years |
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