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R2J25953-00 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # R2J25953-00
Description  H-Bridge Control High Speed Power Switching with Built-in Driver IC and Power MOS FET
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

R2J25953-00 Datasheet(HTML) 3 Page - Renesas Technology Corp

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R2J25953
Preliminary
R07DS0044EJ0300 Rev.3.00
Page 3 of 16
Sep 01, 2010
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Note
Supply voltage
VB
18
V
1
Input voltage
Vin
–0.3 to VB
V
2
Diag voltage
Vdiag
–0.3 to VB
V
3
Output current
Iout
50
A
Diag current
Idiag
5
mA
3
Junction temperature
Tj
–40 to +150
C
Storage temperature
Tstg
–55 to +150
C
Power temperature
Pt
40
W
4
Notes: 1. 28 V at 25
C, 1 min.
40 V at 25
C, 1 sec.
2. Applies to INA, INB, and PWM. Clamps it with 19 V typ.
3. Applies to DIAG
4. One element operation: Tc = 25
C


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