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H5N2501LMTL-E Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # H5N2501LMTL-E
Description  Silicon N Channel MOS FET High Speed Power Switching
Download  8 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

H5N2501LMTL-E Datasheet(HTML) 4 Page - Renesas Technology Corp

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H5N2501LD, H5N2501LS, H5N2501LM
Preliminary
R07DS0056EJ0300 Rev.3.00
Page 4 of 7
Jul 23, 2010
0
40
20
60
80100
1000
10000
100
10
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ta = 25
°C
Ciss
Coss
Crss
0
0.4
00.8
1.21.6
2.0
50
20
Source to Drain Voltage VSD (V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
5
4
3
2
1
−25
0
50
100
150
25
125
75
0
Case Temperature Tc (
°C)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
VDS = 10 V
1 mA
10
30
40
ID = 10 mA
VGS = 0
Ta = 25
°C
Pulse Test
0.1 mA
400
0
16
300
12
200
8
100
0
4
20
40
60
80100
0
Gate Charge Qg (nC)
Dynamic Input Characteristics (Typical)
VDS
VGS
VDD = 200 V
100 V
50 V
VDD = 200 V
100 V
50 V
ID = 18 A
Ta = 25
°C


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