Electronic Components Datasheet Search |
|
H5N2522LS7 Datasheet(PDF) 3 Page - Renesas Technology Corp |
|
H5N2522LS7 Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 7 page H5N2522LS Preliminary R07DS0057EJ0200 Rev.2.00 Page 3 of 6 Jul 23, 2010 Main Characteristics 50 40 30 20 10 0 4 0 8 12 16 20 50 40 30 20 10 0 2 0 46 8 10 Drain to Source Voltage VDS (V) Typical Output Characteristics Gate to Source Voltage VGS (V) Typical Transfer Characteristics 10 1 100 0.1 1 0.01 Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current (Typical) VGS = 10 V Ta = 25 °C Pulse Test 100 10 1 0.1 1 10 1000 0.01 0.1 1000 Drain to Source Voltage VDS (V) Maximum Safe Operation Area 100 VGS = 4 V Ta = 25 °C Pulse Test 10 V 15 V 20 V 8 V 4.5 V 5.5 V 5 V 6 V Ta = 25 °C 1 shot 10 μs Operation in this area is limited by RDS(on) PW = 100 μs Tc = 75 °C 25 °C −25°C VDS = 10 V Pulse Test 0.5 0.4 0.3 0.2 0.1 −25 02550 75 100 125 150 0 Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Temperature (Typical) VGS = 10 V Pulse Test 1 10 100 1000 100 10 Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time (Typical) di / dt = 100 A / μs VGS = 0, Ta = 25°C 1 A ID = 3 A 1.5 A |
Similar Part No. - H5N2522LS7 |
|
Similar Description - H5N2522LS7 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |