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ADA4891-4ARUZ-RL Datasheet(PDF) 6 Page - Analog Devices |
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ADA4891-4ARUZ-RL Datasheet(HTML) 6 Page - Analog Devices |
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6 / 24 page  ADA4891-1/ADA4891-2/ADA4891-3/ADA4891-4 Rev. B | Page 6 of 24 ABSOLUTE MAXIMUM RATINGS Table 3. Parameter Rating Supply Voltage 6 V Input Voltage (Common Mode) −VS − 0.5 V to +VS Differential Input Voltage ±VS Storage Temperature Range −65°C to +125°C Operating Temperature Range −40°C to +125°C Lead Temperature (Soldering, 10 sec) 300°C To ensure proper operation, it is necessary to observe the maxi- mum power derating curves shown in Figure 6. These curves are derived by setting TJ = 150°C in Equation 1. Figure 6 shows the maximum safe power dissipation in the package vs. the ambient temperature on a JEDEC standard 4-layer board. 0 0.5 1.0 2.0 1.5 –55 –35 –15 5 25 45 65 85 105 125 AMBIENT TEMPERATURE (°C) 14-LEAD TSSOP 8-LEAD SOIC_N 14-LEAD SOIC_N 5-LEAD SOT-23 8-LEAD MSOP TJ = 150°C Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. MAXIMUM POWER DISSIPATION The maximum power that can be safely dissipated by the ADA4891-1/ADA4891-2/ADA4891-3/ADA4891-4 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic, approximately 150°C. Temporarily exceeding this limit can cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of 175°C for an extended period can result in device failure. Figure 6. Maximum Power Dissipation vs. Ambient Temperature Table 4 lists the thermal resistance (θJA) for each ADA4891-1/ ADA4891-2/ADA4891-3/ADA4891-4 package. Table 4. Package Type θJA Unit 5-Lead SOT-23 146 °C/W 8-Lead SOIC_N 115 °C/W 8-Lead MSOP 133 °C/W 14-Lead SOIC_N 162 °C/W 14-Lead TSSOP 108 °C/W The still-air thermal properties of the package (θJA), the ambient temperature (TA), and the total power dissipated in the package (PD) can be used to determine the junction temperature of the die. The junction temperature can be calculated as TJ = TA + (PD × θJA) (1) ESD CAUTION The power dissipated in the package (PD) is the sum of the quiescent power dissipation and the power dissipated in the package due to the load drive for all outputs. It can be calculated by PD = (VT × IS) + (VS − VOUT) × (VOUT/RL) (2) where: VT is the total supply rail. IS is the quiescent current. VS is the positive supply rail. VOUT is the output of the amplifier. RL is the output load of the amplifier. |
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