Si4012

8

Rev 0.1

Table 4. Low Battery Detector Characteristics

(TA = 25° C, VDD = 3.3 V, RL = 550

, unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Battery Voltage Measurement

Accuracy

—2

—

%

Table 5. Optional Crystal Oscillator Characteristics

(TA = 25° C, VDD = 3.3 V, RL = 600

, unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Crystal Frequency Range

GPI0 configured as crystal

oscillator

10

—

13

MHz

Input Capacitance (GPIO0)

GPI0 configured as crystal

oscillator

—5

—

pF

Crystal ESR

GPI0 configured as crystal

oscillator

——

50



Start-up Time

Crystal oscillator only,

60 mH motional arm

inductance

—9

—

ms

Table 6. EEPROM Characteristics

Parameter

Conditions

Min

Typ

Max

Units

Program Time

Independent of number of bits

changing values

—8

40

ms

Maximum Count per Counter

Using API

1000000

cycles

Write Endurance (per bit)*

50000

—

—

cycles

Note: *API uses coding technique to achieve write endurance of 1M cycles per bit.

Table 7. Low Power Oscillator Characteristics

Parameter

Conditions

Min

Typ

Max

Units

Programmable Frequency Range Programmable divider in pow-

ers of 2 up to 128

.1875

—

24

MHz

Frequency Accuracy

–1

—

+1

%