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RSM5853P Datasheet(PDF) 1 Page - Sirectifier Global Corp.

Part No. RSM5853P
Description  P-Channel 20Volt (D-S) MOSFET With Schottky Diode
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Maker  SIRECT [Sirectifier Global Corp.]
Homepage  http://www.sirectsemi.com
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RSM5853P Datasheet(HTML) 1 Page - Sirectifier Global Corp.

   
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P-Channel 20Volt (D-S) MOSFET With Schottky Diode
Application
-These miniature surface mount MOSFET utilize a high cell density trench
process to provide low RDS(on) and to provide low RDS(on) and to ensure
minimal power loss and heat dissipation. Typical applications are DC-DC
converters and power management in portable and battery-powered
products such as coputers, printers, PCMCIA cards, cellular and cordless
telephones.
Feature
-Low RDS(on) provides higger efficiency and extends battery life
-Low thermal impedance copper leadframe CF 1206-8 saves board space
-Fast switching speed
-High performance trench technology
Absolute Maximum Ratings
PARAMETER
SYMBOL
MAXIMUM
UNIT
Drain-Source Voltage (MOSFET)
VDS
-20
Reverse Voltage (Schottky)
VKA
20
Gate-Source Voltage (MOSFET)
VGS
±
8
V
TA = 25 ºC
±
2.5
Continuous Drain Current @ TJ = 150ºC (MOSFET) (Note 1)
TA = 70 ºC
ID
±
1.9
Pulsed Drain Current (MOSFET) (Note 2)
IDM
±
10
Continuous Source Current (MOSFET Diode Conduction) (Note 1)
IS
-1.6
Average Forward Current (Schottky)
IF
0.5
Pulsed Forward Current (Schottky)
IFM
8
A
TA = 25 ºC
2.1
Maximum Power Dissipation (MOSFET) (Note 1)
TA = 70 ºC
1.1
TA = 25 ºC
1.3
Maximum Power Dissipation (Schottky) (Note 1)
TA = 70 ºC
PD
0.68
W
Operating Junction and Storage Temperature Range
TJ , TSTG
-55 to +150
ºC
t ≦ 5sec
60
Maximum Junction-to-Ambient
Steady State
RθJA
110
ºC/W
Note: 1.Surface Mounted on 1” X 1” FR-4 Board
September 2008 / Rev.6.2
2.Pulse width limited by maximum junction temperature
A
A
S
G
1
2
3
4
K
K
D
D
CF 1206-8 TOP VIEW
8
7
6
5
G
D
S
A
K
E
L
E
C
T
R
O
N
I
C
RSM5853P


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