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BTB35 Datasheet(PDF) 1 Page - Sirectifier Global Corp. |
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BTB35 Datasheet(HTML) 1 Page - Sirectifier Global Corp. |
1 / 2 page BTB/BTA35 Discrete Triacs(Non-Isolated/Isolated) ABSOLUTE MAXIMUM RATINGS Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) TO-247AD Tc = 80 °C 35 A ITSM Non repetit ive surge peak on-state current (full cycle , Tj initial = 25°C) F = 60 Hz t = 16.7 ms 400 A F = 50 Hz t = 20 ms 335 I²t I² t Value for fusing tp = 10 ms 664 A²s dI/dt Critical rate of rise of on-state current IG = 2 x I GT , tr < 100 ns F = 120 Hz Tj = 125 °C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 4 A PG(AV) Average gate p ower diss ipation Tj = 125 °C 1 W Tstg Tj Storage junction tempe rature range Operating junction temperature range - 4 0 to + 150 - 40 to + 125 °C ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Test Conditions Quadrant Unit IGT (1) VD = 12 V RL = 33 I - II - III MAX. mA VGT ALL MAX. 1.3 V VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C ALL MIN. 0.2 V IH (2) IT = 500 mA MAX. mA IL IG = 1.2 IGT I- III-IV MAX. mA II dV/dt (2) VD = 67 % VDRM gate open Tj = 125°C MIN. V/µs (dI/dt)c (2) Without snubber Tj = 125°C MIN. A/ms G T2 T1 Symbol Ω _ VDSM/VRSM Non repetitive surge peak off-state voltage tp = 10 ms Tj = 25°C VDRM/VRRM + 100 V Dimensions TO-247AD Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 D 3.55 3.65 0.140 0.144 E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0 0.426 0.433 L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 N 1.5 2.49 0.087 0.102 T2 T1 G IV Value 50 100 120 70 120 500 10 |
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