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SN65ELT22DR Datasheet(PDF) 3 Page - Texas Instruments |
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SN65ELT22DR Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 12 page  PECL DC CHARACTERISTICS TTL DC CHARACTERISTICS AC CHARACTERISTICS SN65ELT22 www.ti.com............................................................................................................................................................................................ SLLS924 – DECEMBER 2008 At VCC = 5.0 V, GND = 0.0 V (unless otherwise noted) (1) (2) TA = –40°C TA = 25°C TA = 85°C PARAMETER TEST CONDITIONS UNIT MIN TYP MAX MIN TYP MAX MIN TYP MAX ICC Power supply current 17.3 20 18.2 20 19.4 22 mA VOH High-level output voltage See (3) 3915 3954 4120 3915 3958 4120 3915 3961 4120 mV VOL Low-level output voltage See (3) 3170 3236 3380 3170 3231 3380 3170 3229 3380 mV (1) The device meets the specifications after thermal balance has been established when mounted in a socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are assured only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. (2) Input and output parameters vary 1:1 with VCC. VCC can vary +0.7 V /–0.8 V. (3) Outputs are terminated through a 50- Ω resistor to VCC – 2.0 V. At VCC = 4.2 V to 5.7 V, TA = –40°C to 85°C (unless otherwise noted) (1) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT IIH High-level input current VIN = 2.7 V, VIN = (VCC – 0.025) V 20 µA IIHH High-level input current VIN = VCC 20 µA IIL Low-level input current VIN = 0.5 V, VIN = (GND + 0.025) V –200 µA VIK Input clamp diode voltage IIN = –18 mA –1.2 V VIH High-level input voltage 2.0 Vcc– 0.025 V VIL Low-level input voltage GND + 0.025 0.8 V (1) The device meets the specifications after thermal balance has been established when mounted in a socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are assured only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously At VCC = 4.2 V to 5.7 V, GND = 0.0 V (unless otherwise noted) (1) TA = –40°C TA = 25°C TA = 85°C PARAMETER TEST CONDITIONS UNIT MIN TYP MAX MIN TYP MAX MIN TYP MAX Max switching fMAX frequency(2), 500 490 470 MHz see Figure 5 tPLH 0.6 0.83 1.1 0.6 0.84 1.1 0.6 0.85 1.1 Propagation delay time 1.5 V to 50% ns tPHL 0.5 0.9 0.5 0.9 0.5 0.9 Within device skew See(3) 25 90 25 90 25 90 tSKEW ps Device-to-device skew See (4) 25 100 25 100 25 100 Random clock jitter tJITTER 0.5 0.5 0.5 ps (RMS) tr/tf Output rise/fall times Q (20%–80%) 0.7 1.1 0.7 1.1 0.7 1.1 ns (1) The device meets the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are assured only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. (2) Maximum switching frequency measured at output amplitude of 300 mVpp. (3) Measured between outputs under the identical transitions and conditions on any one device. (4) Device-to-device skew for identical transitions at identical VCC levels. Copyright © 2008, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Link(s): SN65ELT22 |
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