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OPA830IDBVTG4 Datasheet(PDF) 3 Page - Texas Instruments |
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OPA830IDBVTG4 Datasheet(HTML) 3 Page - Texas Instruments |
3 / 35 page OPA830 SBOS263F − AUGUST 2004 − REVISED AUGUST 2008 www.ti.com 3 ELECTRICAL CHARACTERISTICS: VS = ±5V Boldface limits are tested at +25 °C. At TA = 25°C, G = +2, RF = 750Ω, and RL = 150Ω to GND, unless otherwise noted (see Figure 3). OPA830ID, IDBV TYP MIN/MAX OVER TEMPERATURE TEST PARAMETER CONDITIONS +25 °C +25 °C(1) 0 °C to 70 °C(2) −40 °C to +85 °C(2) UNITS MIN/ MAX TEST LEVEL (3) AC PERFORMANCE (see Figure 3) Small-Signal Bandwidth G = +1, VO ≤ 0.2VPP 310 MHz typ C G = +2, VO ≤ 0.2VPP 120 70 68 65 MHz min B G = +5, VO ≤ 0.2VPP 25 18 16 15 MHz min B G = +10, VO ≤ 0.2VPP 11 8 7 6 MHz min B Gain-Bandwidth Product G ≥ +10 110 85 82 80 MHz min B Peaking at a Gain of +1 VO ≤ 0.2VPP 6 dB typ C Slew Rate G = +2, 2V Step 600 280 270 260 V/ µs min B Rise Time 0.5V Step 3.3 5.8 5.85 5.9 ns max B Fall Time 0.5V Step 3.5 5.9 5.95 6.0 ns max B Settling Time to 0.1% G = +2, 1V Step 42 63 65 66 ns max B Harmonic Distortion VO = 2VPP, f = 5MHz 2nd-Harmonic RL = 150Ω −67 −59 −57 −56 dBc max B RL ≥ 500Ω −71 −62 −61 −60 dBc max B 3rd-Harmonic RL = 150Ω −60 −50 −49 −48 dBc max B RL ≥ 500Ω −77 −65 −62 −59 dBc max B Input Voltage Noise f > 1MHz 9.5 10.5 11.0 11.5 nV/ √Hz max B Input Current Noise f > 1MHz 3.7 4.7 5.2 5.7 pA/ √Hz max B NTSC Differential Gain 0.07 % typ C NTSC Differential Phase 0.17 ° typ C DC PERFORMANCE(4) RL = 150Ω Open-Loop Voltage Gain 74 66 65 64 dB min A Input Offset Voltage ±1.5 ±7 ±8.1 ±8.6 mV max A Average Offset Voltage Drift — ±25 ±25 µV/°C max B Input Bias Current VCM = 0V +5 +10 +12 +13 µA max A Input Bias Current Drift ±12 ±12 nA/ °C max B Input Offset Current VCM = 0V ±0.1 ±1 ±1.2 ±1.4 µA max A Input Offset Current Drift — ±5 ±5 nA/ °C max B INPUT Negative Input Voltage(5) −5.5 −5.4 −5.3 −5.2 V max A Positive Input Voltage(5) 3.2 3.1 3.0 2.9 V min A Common-Mode Rejection Ratio (CMRR) Input-Referred 80 76 74 72 dB min A Input Impedance Differential Mode 10 2.1 k Ω pF typ C Common-Mode 400 1.2 k Ω pF typ C OUTPUT Output Voltage Swing G = +2, RL = 1kΩ to GND ±4.88 ±4.86 ±4.85 ±4.84 V min A G = +2, RL = 150Ω to GND ±4.64 ±4.60 ±4.58 ±4.56 V min A Current Output, Sinking and Sourcing ±85 ±65 ±60 ±55 mA min A Short-Circuit Current Output Shorted to Ground 150 mA typ C Closed-Loop Output Impedance G = +2, f ≤ 100kHz 0.06 Ω typ C POWER SUPPLY Minimum Operating Voltage ±1.4 V typ C Maximum Operating Voltage ±5.5 ±5.5 ±5.5 V max A Maximum Quiescent Current VS = ±5V 4.25 4.7 5.3 5.9 mA max A Minimum Quiescent Current VS = ±5V 4.25 4.0 3.6 3.3 mA min A Power-Supply Rejection Ratio (+PSRR) Input-Referred 66 61 60 59 dB min A THERMAL CHARACTERISTICS Specification: ID, IDBV −40 to +85 °C typ C Thermal Resistance, qJA D SO-8 125 °C/W typ C DBV SOT23-5 150 °C/W typ C (1) Junction temperature = ambient for +25°C specifications. (2) Junction temperature = ambient at low temperature limits; junction temperature = ambient +5°C at high temperature limit for over temperature specifications. (3) Test levels: (A) 100% tested at +25°C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information. (4) Current is considered positive out of pin. (5) Tested < 3dB below minimum specified CMRR at ± CMIR limits. |
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