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TFC561D Datasheet(PDF) 1 Page - Sanken electric

Part No. TFC561D
Description  TO-220S Thyristor with built-in reverse diode for HID lamp ignition
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Manufacturer  SANKEN [Sanken electric]
Direct Link  http://www.sanken-ele.co.jp/en
Logo SANKEN - Sanken electric

TFC561D Datasheet(HTML) 1 Page - Sanken electric

  TFC561D Datasheet HTML 1Page - Sanken electric  
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sAbsolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Conditions
V
600
A
A/
µs
A
W
W
V
A
°C
°C
VDRM
ITRM
di/dt
IFGM
PGM
PG (AV)
VRGM
IFRM
Tj
Tstg
430
1200
2.0
5.0
0.5
5
240
– 40 to +125
– 40 to +125
s Features
q
Repetitive peak off-state voltage: VDRM=600V
q
Repetitive peak surge on-state current: ITRM=430A
q
Critical rate-of-rise of on-state current: di/dt=1200A /
µs
q
Gate trigger current: IGT=20mA max
q
With built-in reverse diode
24
VD
G1
G2
C
L
Sample
Measurement circuit
Current waveform (1cycle)
10.2±0.3
1.2±0.2
1.27±0.2
2.59±0.2
1.3±0.2
4.44±0.2
0.86
0.76±0.1
0.4±0.1
2.54±0.5
2.54±0.5
+0.2
0.1
Tj= – 40 to +125
°C, RGK=1kΩ
VD
430V, 100kcycle, Wp=1.3
µs, Ta=125°C
f
50Hz, duty
10%
f
50Hz, duty
10%
f
50Hz
VD
430V, 100kcycle, Wp=1.3
µs, Ta=125°C
sElectrical Characteristics
mA
V
mA
µA
mA
°C/W
V
Parameter
Symbol
Ratings
typ
min
max
Unit
Conditions
V
V
VTM
IGT
IH
VF
VGT
VGD
IDRM (1)
IDRM (2)
Rth
10.0
1.4
4.0
1
100
2
0.1
20
1.5
1.4
(Tj=25
°C)
IT=10A
VD=6V, RL=10
VD=6V, RL=10
VD=480V, Tj=125
°C
RG–K=1k
Ω, Tj=25°C
VD=VDRM, RG–K=1k
Ω, Tj=25°C
VD=VDRM, RG–K=1k
Ω, Tj=125°C
IF=10A
Junction to case
(Ta=25
°C)
2
µs/div
TFC561D
TO-220S Thyristor with built-in reverse diode for HID lamp ignition
Weight: Approx. 1.5g
External Dimensions
(Unit: mm)
(1). Cathode (K)
(2). Anode (A)
(3). Gate (G)
(1) (2) (3)
Repetitive peak off-state voltage
Repetitive surge peak on-state current
Critical rate-of-rise of on-state current
Peak forward gate current
Peak gate power loss
Average gate power loss
Peak reverse gate voltage
Diode repetitive peak surge forward current
Junction temperature
Storage temperature
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Off-state current (1)
Off-state current (2)
Thermal resistance
Diode forward voltage
V The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to cool down the junction temperature of the device to 125
°C. This process shall be repeated up to 100K cycles.
V
V
V


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