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STA509 Datasheet(PDF) 1 Page - Sanken electric |
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STA509 Datasheet(HTML) 1 Page - Sanken electric |
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1 / 1 page  02 4 10 12 68 14 s ID — VDS Characteristics 0 5 4 VDS (V) 3 2 1 6 0.01 1 0.1 20 10 01 2 3 4 5 6 s ID — VGS Characteristics VGS (V) 012 3 6 45 s RDS (on) — ID Characteristics 0 0.2 ID (A) 0.8 0.6 0.4 –50 0 50 100 150 s RDS (on) — TC Characteristics 0 0.1 0.3 0.2 0.4 Tc (ºC) 0.5 0.5 1 5 10 50 s Safe Operating Area (single pulse) 0.5 0.1 1 5 VDS (V) 10 (Tc = 25ºC) 0.05 0.1 0.5 1 6 s Re (yfs) — ID Characteristics 0.2 0.5 1 5 10 ID (A) VGS = 3V VGS = 4V VGS = 5V VGS = 10V VGS = 4V typ. ID = 1A VGS = 10V typ. VDS = 10V VDS = 10V VGS = 4V 00.4 0.2 0.6 0.8 1.4 1.2 1.0 s IDR — VSD Characteristics 0 8 6 4 2 VSD (V) 10 Ta = –55ºC 25ºC 75ºC 150ºC 1ms 100 µ s ID (pulse) max R DS (on) LIMITED Ta = –55ºC 25ºC 150ºC Ta = 150ºC 75ºC 25ºC –55ºC 25ºC Ta = 150ºC 75ºC –55ºC Symbol Ratings Unit (Ta=25ºC) (Ta=25ºC) VDSS 52 ±5 Symbol Test Conditions Ratings Unit V(BR) DSS ID = 1mA, VGS = 0V 47 52 57 min typ max IGSS µA µA VGS = ±20V ±1.0 IDSS S V VDS = 40V, VGS = 0V 100 VTH VDS = 10V, ID = 250 µA2.5 1.0 Re (yfs) VDS = 10V, ID = 1.0A VGS = 10V, ID = 1.0A 1.0 RDS (ON) Ω Ω V µs µs µs µs V VGS = 4V, ID = 1.0A Coss Ciss VDS = 10V f = 1.0MHz VGS = 0V Crss td (on) ID = 1A VDD 12V RL = 12 Ω VGS = 5V RG1 = 50 Ω, RG2 =10Ω tr td (off) tf VSD ISD = 6A, VGS = 0V 0.2 0.25 0.25 0.3 pF pF pF 200 120 20 2.0 7.4 3.3 4.2 1.0 1.5 VGSS V V ±20 ±3 ±6 ID A ID (pulse) *1 A 4 (Ta = 25ºC) 20 (Tc = 25ºC) PT EAS *2 Tch W W 150 40 Tstg ºC ºC mJ –55 to +150 *1 PW 100 µs, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 10 Ω Electrical Characteristics Absolute Maximum Ratings 2 1 3 4 5 6 7 8 9 10 MOS FET Array STA509A 80 Equivalent Circuit Diagram External Dimensions STA a) Type No. b) Lot No. (Unit: mm) 9 •2.54=22.86 ±0.05 a b (2.54) 25.25 ±0.2 0.5 ±0.15 0 ±0.3 1.0 ±0.25 C1.5 ±0.5 13 24 SG D G 56 7 10 DG D S 89 GD 0 ±0.3 |
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