2SD2493 datasheet(1/1 Pages) SANKEN

Part #	2SD2493

Description	Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose)

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Manufacturer	SANKEN [Sanken electric]

Direct Link	http://www.sanken-ele.co.jp/en

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153

Darlington

2SD2493

I C– V CE Characteristics (Typical)

h FE– I C Characteristics (Typical)

h FE– I C Temperature Characteristics (Typical)

θj-a–t Characteristics

I C– V BE Temperature Characteristics (Typical)

V CE(sat) – I B Characteristics (Typical)

Pc – T a Derating

Safe Operating Area (Single Pulse)

f T– I E Characteristics (Typical)

0

2

4

6

26

4

Collector-Emitter Voltage V CE(V)

I B=0.1mA

0.5mA

0.4mA

0.3mA

0.2mA

0.02

0.1

0.5

1

6

5

Collector Current I C(A)

(V CE=4V)

1000

500

200

5000

10000

40000

Typ

0.5

1

5

1

1 0

100

1000

5

5 0

500

2000

Time t(ms)

0

6

4

2

0

2.5

2

1

Base-Emittor Voltage V BE(V)

(V CE=4V)

60

40

20

3.5

0

2 5

5 0

7 5

100

125

150

Ambient Temperature Ta(˚C)

Without Heatsink

10

50

5

3

100

200

0.05

1

0.5

0.1

10

20

5

Collector-Emitter Voltage V CE(V)

DC

0

3

2

1

0.1

1

0.5

10

5

100

50

Base Current I B(mA)

I C=5A

I C=3A

(V CE=4V)

0.02

0.1

5

16

0.5

Collector Current I C(A)

1000

500

100

5000

10000

40000

125˚C

25˚C

–30˚C

–0.02

–0.1

–1

–6

0

40

20

80

60

(V CE=12V)

Emitter Current I E(A)

Typ

Without Heatsink

Natural Cooling

Application : Audio, Series Regulator and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SD2493

110

5

6

1

60(Tc=25°C)

150

–55 to +150

Unit

V

A

W

°C

sAbsolute maximum ratings

sElectrical Characteristics

Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SD2493

100max

110min

5000min

∗

2.5max

3.0max

60typ

55typ

Unit

µA

V

MHz

pF

Conditions

VCB=110V

VEB=5V

IC=30mA

VCE=4V, IC=5A

IC=5A, IB=5mA

VCE=12V, IE=–2A

VCB=10V, f=1MHz

(Ta=25°C)

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1624)

sTypical Switching Characteristics (Common Emitter)

VCC

(V)

30

RL

(

Ω)

6

IC

(A)

5

VBB2

(V)

–5

IB2

(mA)

–5

ton

(

µs)

0.8typ

tstg

(

µs)

6.2typ

tf

(

µs)

1.1typ

IB1

(mA)

5

VBB1

(V)

10

External Dimensions MT-100(TO3P)

15.6±0.4

9.6

ø3.2±0.1

2

3

1.05

+0.2

-0.1

BE

5.45±0.1

C

4.8±0.2

0.65

+0.2

-0.1

1.4

2.0±0.1

a

b

Weight : Approx 6.0g

a. Type No.

b. Lot No.

B

C

E

(70

Ω)

Equivalent circuit

∗hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000)

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