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2SD2141 Datasheet(PDF) 1 Page - Sanken electric

Part No. 2SD2141
Description  Silicon NPN Triple Diffused Planar Transistor(Ignitor, Driver for Solenoid and Motor, and General Purpose)
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Maker  SANKEN [Sanken electric]
Homepage  http://www.sanken-ele.co.jp/en
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2SD2141 Datasheet(HTML) 1 Page - Sanken electric

   
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148
2SD2141
I C– V CE Characteristics (Typical)
h FE– I C Characteristics (Typical)
θj-a–t Characteristics
V CE(sat) – I B Characteristics (Typical)
Pc – T a Derating
0
0
5
10
24
6
Collector-Emitter Voltage V CE(V)
Safe Operating Area (Single Pulse)
150mA
I B=1mA
2mA
4mA
18mA
20mA
120mA
90mA 60mA
0
3
2
1
0.2
1
0.5
10
5
200
100
50
Base Current I B(mA)
1A
3A
5A
I C=7A
0.02
0.1
1
0.5
10
5
5000
10000
1000
500
100
10
50
Collector Current I C(A)
(V CE=2V)
Typ
0.1
1
5
0.5
1
1 0
100
1000
Time t(ms)
50
10
5
1
100
500
0.01
0.05
0.1
1
0.5
10
20
5
Collector-Emitter Voltage V CE(V)
DC
Without Heatsink
Natural Cooling
40
30
20
10
2
0
0
2 5
5 0
7 5
100
125
150
Ambient Temperature Ta(˚C)
Without Heatsink
50x50x2
100x100x2
150x150x2
I C– V BE Temperature Characteristics (Typical)
0
10
5
0
2.0
2.4
1.0
Base-Emittor Voltage V BE(V)
(V CE=4V)
h FE– I C Temperature Characteristics (Typical)
0.02
0.1
1.0
5
0.5
10
5000
10000
1000
500
100
50
20
Collector Current I C(A)
(V CE=2V)
125˚C
–55˚C
25˚C
f T– I E Characteristics (Typical)
(V CE=12V)
Emitter Current I E(A)
0.05
0.01
01
0.5
1
5
0
20
10
30
40
Typ
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
Silicon NPN Triple Diffused Planar Transistor
Application : Ignitor, Driver for Solenoid and Motor, and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Ratings
380±50
380±50
6
6(Pulse10)
1
35(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
sAbsolute maximum ratings
sElectrical Characteristics
Ratings
10max
20max
330to430
1500min
1.5max
20typ
95typ
Unit
µA
mA
V
V
MHz
pF
Conditions
VCB=330V
VEB=6V
IC=25mA
VCE=2V, IC=3A
IC=4A, IB=20mA
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
External Dimensions FM20(TO220F)
ø3.3±0.2
10.1±0.2
2.54
2.54
1.35±0.15
0.85
+0.2
-0.1
1.35±0.15
2.2±0.2
4.2±0.2
2.8
c0.5
2.4±0.2
0.45
+0.2
-0.1
BE
C
a
b
Weight : Approx 2.0g
a. Part No.
b. Lot No.
Built-in Avalanche Diode
for Surge Absorbing
Darlington
B
C
E
(1.5k
Ω)(100Ω)
Equivalent circuit


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