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2SD1796 Datasheet(PDF) 1 Page - Sanken electric |
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2SD1796 Datasheet(HTML) 1 Page - Sanken electric |
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1 / 1 page 139 2SD1796 I C– V CE Characteristics (Typical) h FE– I C Characteristics (Typical) h FE– I C Temperature Characteristics (Typical) θj-a–t Characteristics Pc – T a Derating 0 0 1 2 3 4 2 13 4 Collector-Emitter Voltage V CE(V) IB =20mA 0.3mA 1.0mA 0.4mA 0.5mA 0.8mA 0.6mA Safe Operating Area (Single Pulse) f T– I E Characteristics (Typical) 4 1 0.1 0.5 0.05 50 500 100 1000 10000 20000 5000 Collector Current I C(A) (V CE=4V) –0.01 –0.1 –1 –4 0 20 40 120 100 60 80 (V CE=10V) Emitter Current I E(A) Typ 10 50 3 5 100 0.05 0.1 1 0.5 10 5 Collector-Emitter Voltage V CE(V) Without Heatsink Natural Cooling DC 10ms 0.5 1 5 1 1 0 100 1000 Time t(ms) Typ V CB=10V I E=–2V V CE(sat) – I B Characteristics (Typical) 0 3 2 1 0.2 0.5 5 1 0 1 100 50 Base Current I B(mA) IC=4A I C=3A I C=2A I C=1A I C– V BE Temperature Characteristics (Typical) 02 1 Base-Emittor Voltage V BE(V) (V CE=2V) 0 3 4 2 1 Collector Current I C(A) 0.05 0.5 1 4 0.1 100 50 500 1000 5000 10000 20000 (V CE=4V) 125˚C 25˚C –30˚C 30 20 10 2 0 0 2 5 5 0 7 5 100 125 150 Ambient Temperature Ta(˚C) With Infinite heatsink Without Heatsink 150x150x2 50x50x2 10 0 x10 0 x2 Natural Cooling Silicone Grease Heatsink: Aluminum in mm Silicon NPN Triple Diffused Planar Transistor Application : Driver for Solenoid, Relay and Motor and General Purpose Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 60±10 60±10 6 4 0.5 25(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C sAbsolute maximum ratings sElectrical Characteristics Ratings 10max 10max 60±10 2000min 1.5max 60typ 45 typ Unit µA mA V V MHz pF Conditions VCB=50V VEB=6V IC=10mA VCE=4V, IC=3A IC=3A, IB=10mA VCE=12V, IE=–0.2A VCB=10V, f=1MHz (Ta=25°C) (Ta=25°C) Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB External Dimensions FM20(TO220F) ø3.3±0.2 10.1±0.2 2.54 2.54 1.35±0.15 0.85 +0.2 -0.1 1.35±0.15 2.2±0.2 4.2±0.2 2.8 c0.5 2.4±0.2 0.45 +0.2 -0.1 BE C a b sTypical Switching Characteristics (Common Emitter) VCC (V) 30 RL ( Ω) 10 IC (A) 3 VBB2 (V) –5 IB2 (mA) –10 ton ( µs) 1.0typ tstg ( µs) 4.0typ tf ( µs) 1.5typ IB1 (mA) 10 VBB1 (V) 10 Weight : Approx 2.0g a. Part No. b. Lot No. Built-in Avalanche Diode for Surge Absorbing Darlington B C E (3 k Ω)(150Ω) Equivalent circuit |
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