KM6164002, KM6164002E, KM6164002I

CMOS SRAM

PRELIMINARY

Rev 2.0

- 3 -

June -1997

ABSOLUTE MAXIMUM RATINGS*

* Stresses greater than those listed under "Absolute Maximum Rating" may cause permanent damage to the device. This is a stress ra ting only and func-

tional operation of the device at these at these or any other conditions above those indicated in the operating sections of this

specification is not implied.

Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Parameter

Symbol

Rating

Unit

-0.5 to 7.0

V

-0.5 to 7.0

V

Power Dissipation

1.0

W

Storage Temperature

-65 to 150

°C

Operating Temperature

Commercial

0 to 70

°C

Extended

-25 to 85

°C

Industrial

-40 to 85

°C

°C)

NOTE: Above parameters are also guaranteed at extended and industrial temperature ranges.

Parameter

Symbol

Min

Typ

Max

Unit

Supply Voltage

4.5

5.0

5.5

V

Ground

0

0

0

V

Input Low Voltage

2.2

-

V

Input Low Voltage

-0.5*

-

0.8

V

°C, Vcc=5.0V±10%, unless otherwise specified)

NOTE: Above parameters are also guaranteed at extended and industrial temperature ranges.

±5% Temp. = 25°C

Parameter

Symbol

Test Conditions

Min

Max

Unit

Input Leakage Current

-2

2

µA

Output Leakage Current

-2

2

µA

Operating Current

Min. Cycle, 100% Duty

20ns

-

240

§Ì

25ns

-

220

Standby Current

-

60

§Ì

f=0MHz, CS

-

10

§Ì

Output Low Voltage Level

-

0.4

V

Output High Voltage Level

2.4

-

V

-

3.95

V

°C, f=1.0MHz)

* NOTE : Capacitance is sampled and not 100% tested.

Item

Symbol

Test Conditions

MIN

Max

Unit

Input/Output Capacitance

-

8

pF

Input Capacitance

-

6

pF