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S5T3170X01 Datasheet(PDF) 5 Page - Samsung semiconductor

Part # S5T3170X01
Description  LOW POWER DTMF RECEIVER
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

S5T3170X01 Datasheet(HTML) 5 Page - Samsung semiconductor

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LOW POWER DTMF RECEIVER
S5T3170
5
NOTES:
1.
Digit sequence consists of all 16 DTMF tones.
2.
Tone duration = 40mS, Tone pause = 40mS.
3.
Nominal DTMF frequencies are used.
4.
Both tones in the composite signal have an equal amplitude.
5.
Tone pair is deviated by
± 1.5% ± 2Hz.
6.
Bandwidth limited (3KHz) Gaussian Noise.
7.
The precise dial tone frequencies are (350Hz and 440Hz)
± 2%.
8.
For an error rate of better than 1 in 10000.
9.
Referenced to lowest level frequency component in DTMF signal.
10. Minimum signal acceptance level is measured with specified maximum frequency deviation.
11. This item also applies to a third tone injected onto the power supply.
12. Referenced to Fig. 1 Input DTMF tone level at -28dBm.
Third Tone Tolerance
T3rd
−25
−16
dB
Noise Tolerance
TN
−12
dB
Dial Tone Tolerance
DT
18
22
dB
Crystal Clock Frequency
fCK
3.5759
3.5795 3.5831
MHz
Maximum Clock Input Rise Time
tR(MAX)
External Clock
110
nS
Maximum Clock Input Fall Time
tF(MAX)
External Clock
110
nS
Acceptable Clock Input Duty Cycle
DCK
External Clock
40
50
60
%
Acceptable Capacitive Load
DL
OSC2 PIN
30
pF
Tone Present Detect Time
tDET(P)
5
11
14
mS
Tone Absent Detect Time
tDET(A)
0.5
4
8.5
mS
Minimum Tone Duration Accept
tTDA(MIN)
User Adjustable
40
mS
Minimum Tone Duration Reject
tTDR(MAX)
User Adjustable
20
mS
Acceptable Interdigit Pause
tIDP(A)
User Adjustable
40
mS
Rejectable Interdigit Pause
tIDP(R)
User Adjustable
20
mS
Propagation Delay Time SI to Q
tD(SI-Q)
OE = High
8
11
µS
Propagation Delay Time SI to DSO
tD(SI-D)
OE = High
12
16
µS
Output Data Setup Q to DSO
tSU
OE = High
3.4
µS
Propagation Delay Time OE to Q
(Enable)
tD(QE-Q)EN RL = 10K, CL = 50pF
50
60
nS
Propagation Delay Time OE to Q
(Disable)
tD(QE-Q)DIS RL = 10K, CL = 50pF
300
nS
ELECTRICAL CHARACTERISTICS (Continued)
(VDD = 5V, Ta = 25°C, unless otherwise noted)
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Unit


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