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S524A40X10 Datasheet(PDF) 1 Page - Samsung semiconductor |
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S524A40X10 Datasheet(HTML) 1 Page - Samsung semiconductor |
1 / 18 page S524A40X10/40X20/40X40 1K/2K/4K-bit Serial EEPROM for Low Power with software write protect Data Sheet 2-1 OVERVIEW The S524A40X10/40X20/40X40 serial EEPROM has a 1,024/2,048/4,096-bit (128/256/512-byte) capacity, supporting the standard I 2C™-bus serial interface. It is fabricated using Samsung’s most advanced CMOS technology. It has been developed for low power and low voltage applications (1.8 V to 5.5 V). Important features are a hardware-based write protection circuit for the entire memory area and software-based write protection logic for the lower 128 bytes. Hardware-based write protection is controlled by the state of the write-protect (WP) pin. The software-based method is one-time programmable and permanent. Using one-page write mode, you can load up to 16 bytes of data into the EEPROM in a single write operation. Another significant feature of the S524A40X10/40X20/40X40 is its support for fast mode and standard mode. FEATURES I 2C-Bus Interface • Two-wire serial interface • Automatic word address increment EEPROM • 1K/2K/4K-bit (128/256/512-byte) storage area • 16-byte page buffer • Typical 3 ms write cycle time with auto-erase function • Hardware-based write protection for the entire EEPROM (using the WP pin) • Software-based write protection for the lower 128-byte EEPROM • EEPROM programming voltage generated on chip • 1,000,000 erase/write cycles • 100 years data retention Operating Characteristics • Operating voltage — 1.8 V to 5.5 V • Operating current — Maximum write current: < 3 mA at 5.5 V — Maximum read current: < 200 µA at 5.5 V — Maximum stand-by current: < 1 µA at 5.5 V • Operating temperature range — – 25°C to + 70°C (commercial) — – 40°C to + 85°C (industrial) • Operating clock frequencies — 100 kHz at standard mode — 400 kHz at fast mode • Electrostatic discharge (ESD) — 5,000 V (HBM) — 500 V (MM) Packages • 8-pin DIP, SOP, and TSSOP |
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