S1T8528X01-Q0R0 datasheet(10/35 Pages) SAMSUNG

Part #	S1T8528X01-Q0R0

Description	ENHANCED-1 CHIP CT0 RF IC

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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10 / 35 page

S1T8528

ENHANCED-1 CHIP CT0 RF IC

10

Expander Gain Difference

∆G

V1(EXP)

VinE = −10dB

−1.0

0

1.0

dB

∆G

V2(EXP)

VinE = − 20dB

−1.5

0

1.5

dB

∆G

V3(EXP)

VinE =− 30dB

−2.0

0

2.0

dB

Expander Output Distortion

THDEXP

VinE = 63.2mVrms → 0dB

−

0.5

1.0

%

Mute Attenuation Ratio

ATTMUTE

VinE = 63.2mVrms → 0dB

60

80

−

dB

Expander Maximum Output

Voltage

VOEXP(MAX)

VinE = Variable

THD = 10%

800

−

mVrms

Maximum Output Voltage

VOSPK(MAX)

RL = 150Ω

−

2.2

−

Vp-p

RL = 600

Ω

−

3.0

-

Vp-p

Input Current

IIH

Vin = Vcc

−

5

µA

IIL

Vin = 0V

−5

−

µA

Input Voltage

VIH

−

Vcc-0.3

−

V

VIL

−

0.3

V

Output Current

IOH

Vout = Vcc

0.3

−

mA

IOL

Vout = 0V

0.3

−

mA

Output Voltage

VOH1

PDT,PDR: Io = -0.3mA

( Sourcing )

Vcc-0.4

−

V

VOL1

PDT,PDR: Io = 0.3mA

( Sinking )

−

0.4

V

VOH2

LD,fMCU: Io = − 0.1mA

( Sourcing )

Vcc-0.5

−

V

VOL2

LD,fMCU: Io = 0.1mA

( Sinking )

−

0.5

V

PLL regulator voltage

VPLLREG

−

1.90

2.05

2.20

V

Regulator Load Current

IREG

Vout = VREG(OPEN)-0.05V

−

3.0

−

mA

ELECTRICAL CHARACTERISTICS (Continued)

Characteristic

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

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S1T8528X01-Q0R0 Datasheet(PDF) 10 Page - Samsung semiconductor

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