S1T2425A datasheet(3/7 Pages) SAMSUNG

Part #	S1T2425A

Description	SPEECH NETWORK WITH DIALER INTERFACE

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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SPEECH NETWORK WITH DIALER INTERFACE

S1T2425A

3

Tip-Ring Voltage

(including polarity guard bridge

drop of 1.4V)

(Speech Mode)

VTR

IL = 5.0mA

IL = 10mA

IL = 20mA

IL = 40mA

IL = 60mA

−

2.4

3.9

4.6

5.6

6.6

−

VDC

AC impedance

Speech mode (incl. C6,see fig.

4)

Zac = (600)V +/ (VS - V+)

Tone Mode (including C6)

Zac

IL = 20mA

IL = 60mA

20mA < IL , 60mA

−

750

300

1650

−

W

SYSTEM AMPLIFIERS

TX Gain

TXO Bias Voltage

TXI input Resistance

GV (TX)

VBIAS (SPM)

VBIAS (TM)

VOL (SPM)

RI (TXI)

TXI to TXO

Speech/Pulse Mode

Tone Mode

Speech/Pulse Mode

24

0.45

VR −25

−

26

0.52

VR −5.0

125

10

28

0.60

−

250

−

dB

xVR

mV

k

Ω

RX

RXO Bias voltage

RXO Source current

RXO High Voltage

RXO Low Voltage

VBIAS (AM)

ISOURCE (SM)

ISOURCE (PTM)

VOH (AM)

VOL (AM)

All Mode

Speech Mode

Pulse/tone Mode

All Mode

0.45

1.5

200

VR −100

−

0.52

2.0

400

VR −50

50

0.60

−

150

xVR

mA

µA

mV

SIDETONE AMPLIFIER

Gain (TXO to STA)

Speech Mode

Pulse Mode

Gv(STA)

@VLR = 0.5V

@VLR = 2.5V

@VLR = 0.2V

@VLR = 1.0V

−

−15

−21

−15

−21

−

dB

STA Bias Voltage

VBIAS (STA)

All Modes

0.65

0.8

0.9

xVR

MICROPHONE, RECEIVER CONTROLS

MIC Saturation Voltage

VSAT (MIC)

Speech Mode,1 = 500

µA

−

50

125

mV

MIC Leakage Current

ILKG (MIC)

Dialing Mode,Pin 1=3.0V

−

0

5.0

µA

MAT Resistance

RRMT (SM)

RRMT (DM)

Speech Mode

Dialing Mode

−

5.0

8.0

10

15

18

Ω

k

Ω

RMT Delay

tD (RMT)

Dialing to Speech

2.0

4.0

20

ms

EQUALIZATION AMPLIFIER

GAIN (V + to EQ)

Speech Mode

Pulse Mode

GV (EQ)

@ VLR = 0.5V

@ VLR = 2.5V

@ VLR = 0.2V

@ VLR = 1.0V

−

−12

−2.5

−12

−2.5

−

dB

ELECTRICAL CHARACTERISTICS (Ta = 25°C) (Continued)

Characteristic

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

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