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KM44C4000C Datasheet(PDF) 6 Page - Samsung semiconductor

Part No. KM44C4000C
Description  4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM44C4000C Datasheet(HTML) 6 Page - Samsung semiconductor

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KM44C4000C, KM44C4100C
CMOS DRAM
KM44V4000C, KM44V4100C
AC CHARACTERISTICS (Continued)
Parameter
Symbol
-5
-6
Units
Note
Min
Max
Min
Max
Data set-up time
tDS
0
0
ns
9
Data hold time
tDH
10
10
ns
9
Refresh period (2K, Normal)
tREF
32
32
ms
Refresh period (4K, Normal)
tREF
64
64
ms
Refresh period (L-ver)
tREF
128
128
ms
Write command set-up time
tWCS
0
0
ns
7
CAS to W delay time
tCWD
36
40
ns
7
RAS to W delay time
tRWD
73
85
ns
7
Column address to W delay time
tAWD
48
55
ns
7
CAS precharge to W delay time
tCPWD
53
60
ns
CAS set-up time (CAS -before-RAS refresh)
tCSR
5
5
ns
CAS hold time (CAS -before-RAS refresh)
tCHR
10
10
ns
RAS to CAS precharge time
tRPC
5
5
ns
Access time from CAS precharge
tCPA
30
35
ns
3
Fast Page cycle time
tPC
35
40
ns
Fast Page read-modify-write cycle time
tPRWC
76
85
ns
CAS precharge time (Fast Page cycle)
tCP
10
10
ns
RAS pulse width (Fast Page cycle)
tRASP
50
200K
60
200K
ns
RAS hold time from CAS precharge
tRHCP
30
35
ns
OE access time
tOEA
13
15
ns
OE to data delay
tOED
13
15
ns
Output buffer turn off delay time from OE
tOEZ
0
13
0
15
ns
6
OE command hold time
tOEH
13
15
ns
Write command set-up time (Test mode in)
tWTS
10
10
ns
11
Write command hold time (Test mode in)
tWTH
10
10
ns
11
W to RAS precharge time(C-B-R refresh)
tWRP
10
10
ns
W to RAS hold time(C-B-R refresh)
tWRH
10
10
ns
RAS pulse width (C-B-R self refresh)
tRASS
100
100
us
13,14,15
RAS precharge time (C-B-R self refresh)
tRPS
90
110
ns
13,14,15
CAS hold time (C-B-R self refresh)
tCHS
-50
-50
ns
13,14,15


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