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KM44C4000C Datasheet(PDF) 4 Page - Samsung semiconductor

Part No. KM44C4000C
Description  4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
Download  20 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM44C4000C Datasheet(HTML) 4 Page - Samsung semiconductor

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KM44C4000C, KM44C4100C
CMOS DRAM
KM44V4000C, KM44V4100C
*Note :
ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6 address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one fast page mode cycle time, tPC.
DC AND OPERATING CHARACTERISTICS (Continued)
ICC1* : Operating Current (RAS and CAS, Address cycling @tRC=min.)
ICC2 : Standby Current (RAS=CAS=W=VIH)
ICC3* : RAS-only Refresh Current (CAS=VIH, RAS, Address cycling @tRC=min.)
ICC4* : Fast Page Mode Current (RAS=VIL, CAS, Address cycling @tPC=min.)
ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @tRC=min.)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, CAS=0.2V,
DQ=Don
′t care, TRC=31.25us(4K/L-ver), 62.5us(2K/L-ver), TRAS=TRASmin~300ns
ICCS : Self Refresh Current
RAS=CAS=0.2V, W=OE=A0 ~ A11=VCC-0.2V or 0.2V,
DQ0 ~ DQ3=VCC-0.2V, 0.2V or Open
Symbol
Power
Speed
Max
Units
KM44V4000C
KM44V4100C
KM44C4000C
KM44C4100C
ICC1
Don
′t care
-5
-6
90
80
110
100
90
80
110
100
mA
mA
ICC2
Normal
L
Don
′t care
1
1
1
1
2
1
2
1
mA
mA
ICC3
Don
′t care
-5
-6
90
80
110
100
90
80
110
100
mA
mA
ICC4
Don
′t care
-5
-6
80
70
90
80
80
70
90
80
mA
mA
ICC5
Normal
L
Don
′t care
0.5
200
0.5
200
1
250
1
250
mA
uA
ICC6
Don
′t care
-5
-6
90
80
110
100
90
80
110
100
mA
mA
ICC7
L
Don
′t care
250
250
300
300
uA
ICCS
L
Don
′t care
200
200
250
250
uA


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