KM416S8030

CMOS SDRAM

REV. 2 Mar. '98

Preliminary

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Voltage on any pin relative to Vss

-1.0 ~ 4.6

V

-1.0 ~ 4.6

V

Storage temperature

-55 ~ +150

°C

Power dissipation

1

W

Short circuit current

50

mA

Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

Note :

DC OPERATING CONDITIONS

°C)

Parameter

Symbol

Min

Typ

Max

Unit

Note

Supply voltage

3.0

3.3

3.6

V

Input logic high votlage

2.0

3.0

V

1

Input logic low voltage

-0.3

0

0.8

V

2

Output logic high voltage

2.4

-

-

V

Output logic low voltage

-

-

0.4

V

Input leakage current(Inputs)

-5

-

5

uA

3

Input leakage current (I/O pins)

-5

-

5

uA

3,4

Parameter

Symbol

Min

Max

Unit

Clock

2.5

4

pF

RAS, CAS, WE, CS, CKE, DQM

2.5

5

pF

Address

2.5

5

pF

4

6.5

pF

≤ 3ns.

≤ 3ns.

3. Any input 0V

Input leakage currents include HI-Z output leakage for all bi-directional buffers with Tri-State outputs.

4. Dout is disabled, 0V

Note :