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KM416C256D Datasheet(PDF) 6 Page - Samsung semiconductor

Part No. KM416C256D
Description  256K x 16Bit CMOS Dynamic RAM with Fast Page Mode
Download  8 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416C256D Datasheet(HTML) 6 Page - Samsung semiconductor

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KM416C256D, KM416V256D
CMOS DRAM
AC CHARACTERISTICS (Continued)
Parameter
Symbol
-5
-6
-7
Units
Notes
Min
Max
Min
Max
Min
Max
Data set-up time
tDS
0
0
0
ns
9,19
Data hold time
tDH
10
10
15
ns
9,19
Refresh period (Normal)
tREF
8
8
8
ms
Refresh period (L-ver)
tREF
128
128
128
ms
CAS to W delay time
tCWD
37
37
47
ns
7,14
RAS to W delay time
tRWD
72
82
97
ns
7
Column address to W delay time
tAWD
47
52
62
ns
7
CAS precharge to W delay time
tCPWD
52
57
67
ns
7
CAS set-up time (CAS -before-RAS refresh)
tCSR
10
10
10
ns
17
CAS hlod time (CAS -before-RAS refresh)
tCHR
10
10
10
ns
18
RAS to CAS precharge time
tRPC
5
5
5
ns
CAS precharge time (CBR counter test cycle)
tCPT
20
20
25
ns
Access time from CAS precharge
tCPA
30
35
40
ns
3
Fast Page mode cycle time
tPC
35
40
45
ns
Fast Page read-modify-write cycle time
tPRWC
77
82
97
ns
CAS precharge time (Fast Page cycle)
tCP
10
10
10
ns
13
RAS pulse width (Fast Page cycle)
tRASP
50
100K
60
100K
70
100K
ns
RAS hold time from CAS precharge
tRHCP
30
35
40
ns
OE access time
tOEA
15
15
20
ns
OE to data delay
tOED
12
12
17
ns
Output buffer turn off delay time from OE
tOEZ
0
12
0
12
0
17
ns
6
OE command hold time
tOEH
15
15
20
ns
RAS pulse width (C-B-R self refresh)
tRASS
100
100
100
us
11
RAS precharge time (C-B-R self refresh)
tRPS
90
110
130
ns
11
CAS hold time (C-B-R self refresh)
tCHS
-50
-50
-50
ns
11
*1
Note) *1 : 5V only


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