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KM416C1000C Datasheet(PDF) 4 Page - Samsung semiconductor

Part No. KM416C1000C
Description  1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
Download  34 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416C1000C Datasheet(HTML) 4 Page - Samsung semiconductor

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KM416C1000C, KM416C1200C
CMOS DRAM
KM416V1000C, KM416V1200C
*Note :
ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one fast page mode cycle time, tPC.
DC AND OPERATING CHARACTERISTICS (Continued)
ICC1* : Operating Current (RAS and UCAS, LCAS cycling @tRC=min.)
ICC2 : Standby Current (RAS=UCAS=LCAS=W=VIH)
ICC3* : RAS-only Refresh Current (UCAS=LCAS=VIH, RAS cycling @tRC=min.)
ICC4* : Fast Page Mode Current (RAS=VIL, UCAS or LCAS, Address cycling @tPC=min.)
ICC5 : Standby Current (RAS=UCAS=LCAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS, UCAS or LCAS cycling @tRC=min.)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, UCAS, LCAS=0.2V,
DQ=Don
′t care, TRC=31.25us(4K/L-ver), 125us(1K/L-ver),
TRAS=TRASmin~300ns
ICCS : Self Refresh Current
RAS=UCAS=LCAS=VIL, W=OE=A0 ~ A11=VCC-0.2V or 0.2V,
DQ0 ~ DQ15=VCC-0.2V, 0.2V or Open
Symbol
Power
Speed
Max
Units
KM416V1000C
KM416V1200C
KM416C1000C
KM416C1200C
ICC1
Don
′t care
-5
-6
90
80
140
130
90
80
140
130
mA
mA
ICC2
Normal
L
Don
′t care
1
1
1
1
2
1
2
1
mA
mA
ICC3
Don
′t care
-5
-6
90
80
140
130
90
80
140
130
mA
mA
ICC4
Don
′t care
-5
-6
90
80
90
80
90
80
90
80
mA
mA
ICC5
Normal
L
Don
′t care
0.5
200
0.5
200
1
200
1
200
mA
uA
ICC6
Don
′t care
-5
-6
90
80
140
130
90
80
140
130
mA
mA
ICC7
L
Don
′t care
300
200
350
250
uA
ICCS
L
Don
′t care
150
150
200
200
uA


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