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KM416C1000B Datasheet(PDF) 1 Page - Samsung semiconductor

Part No. KM416C1000B
Description  1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416C1000B Datasheet(HTML) 1 Page - Samsung semiconductor

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KM416C1000B, KM416C1200B
CMOS DRAM
KM416V1000B, KM416V1200B
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-5,-6 or -7), power
consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-
before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This
1Mx16 Fast Page Mode DRAM family is fabricated using Samsung's advanced CMOS process to realize high band-width, low power
consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
¡Ü
Part Identification
- KM416C1000B/B-L (5V, 4K Ref.)
- KM416C1200B/B-L (5V, 1K Ref.)
- KM416V1000B/B-L (3.3V, 4K Ref.)
- KM416V1200B/B-L (3.3V, 1K Ref.)
¡Ü
Fast Page Mode operation
¡Ü
2 CAS Byte/Word Read/Write operation
¡Ü
CAS-before-RAS refresh capability
¡Ü
RAS-only and Hidden refresh capability
¡Ü
Self-refresh capability (L-ver only)
¡Ü
TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
¡Ü
Early Write or output enable controlled write
¡Ü
JEDEC Standard pinout
¡Ü
Available in 42-pin SOJ 400mil and 50(44)-pin TSOP(II)
400mil packages
¡Ü
Single +5V¡¾10% power supply (5V product)
¡Ü
Single +3.3V¡¾0.3V power supply (3.3V product)
Control
Clocks
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
Row Decoder
Column Decoder
Lower
Data out
Buffer
RAS
UCAS
LCAS
W
Vcc
Vss
DQ0
to
DQ7
A0-A11
(A0 - A9)*1
A0 - A7
(A0 - A9)*1
Memory Array
1,048,576 x16
Cells
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
¡Ü
Refresh Cycles
Part
NO.
VCC
Refresh
cycle
Refresh period
Normal
L-ver
C1000B
5V
4K
64ms
128ms
V1000B
3.3V
C1200B
5V
1K
16ms
V1200B
3.3V
¡Ü
Perfomance Range
Speed
tRAC
tCAC
tRC
tPC
Remark
-5
50ns
15ns
90ns
35ns
5V/3.3V
-6
60ns
15ns
110ns
40ns
5V/3.3V
-7
70ns
20ns
130ns
45ns
5V/3.3V
¡Ü
Active Power Dissipation
Speed
3.3V
5V
4K
1K
4K
1K
-5
396
576
605
880
-6
360
540
550
825
-7
324
504
495
770
Unit : mW
Upper
Data in
Buffer
Upper
Data out
Buffer
Lower
Data in
Buffer
DQ8
to
DQ15
OE
Note) *1 : 1K Refresh


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