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KM416C1000B Datasheet(PDF) 6 Page - Samsung semiconductor

Part No. KM416C1000B
Description  1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
Download  8 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416C1000B Datasheet(HTML) 6 Page - Samsung semiconductor

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KM416C1000B, KM416C1200B
CMOS DRAM
KM416V1000B, KM416V1200B
AC CHARACTERISTICS (Continued)
Parameter
Symbol
-5
-6
-7
Units
Notes
Min
Max
Min
Max
Min
Max
Data set-up time
tDS
0
0
0
ns
8,16
Data hold time
tDH
10
10
15
ns
8,16
Refresh period (1K, Normal)
tREF
16
16
16
ms
Refresh period (4K, Normal)
tREF
64
64
64
ms
Refresh period (L-ver)
tREF
128
128
128
ms
Write command set-up time
tWCS
0
0
0
ns
6
CAS to W delay time
tCWD
36
40
50
ns
6,12
RAS to W delay time
tRWD
73
85
95
ns
6
Column address to W delay time
tAWD
48
55
60
ns
6
CAS precharge to W delay time
tCPWD
53
60
65
ns
6
CAS set-up time (CAS -before-RAS refresh)
tCSR
5
5
5
ns
14
CAS hlod time (CAS -before-RAS refresh)
tCHR
10
10
15
ns
15
RAS to CAS precharge time
tRPC
5
5
5
ns
CAS precharge time (CBR counter test cycle)
tCPT
20
20
25
ns
Access time from CAS precharge
tCPA
30
35
40
ns
3
Fast Page mode cycle time
tPC
35
40
45
ns
Fast Page read-modify-write cycle time
tPRWC
76
80
95
ns
CAS precharge time (Fast Page cycle)
tCP
10
10
10
ns
11
RAS pulse width (Fast Page cycle)
tRASP
50
200K
60
200K
70
200K
ns
RAS hold time from CAS precharge
tRHCP
30
35
40
ns
OE access time
tOEA
13
15
20
ns
3
OE to data delay
tOED
13
15
20
ns
Output buffer turn off delay time from OE
tOEZ
0
13
0
15
0
20
ns
OE command hold time
tOEH
13
15
20
ns
RAS pulse width (C-B-R self refresh)
tRASS
100
100
100
us
17
RAS precharge time (C-B-R self refresh)
tRPS
90
110
130
ns
17
CAS hold time (C-B-R self refresh)
tCHS
-50
-50
-50
ns
17


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