FLASH MEMORY

2

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

Document Title

32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

Revision History

The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have

any questions, please contact the SAMSUNG branch office near you.

Revision No.

0.5

0.6

0.7

0.8

0.9

Remark

History

1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 33)

2. Add the data protection Vcc guidence for 1.8V device - below about

1.1V. (Page 34)

The min. Vcc value 1.8V devices is changed.

K9F56XXQ0B : Vcc 1.65V~1.95V --> 1.70V~1.95V

Pb-free Package is added.

K9F5608U0B-FCB0,FIB0

K9F5608Q0B-HCB0,HIB0

K9F5616U0B-HCB0,HIB0

K9F5616U0B-PCB0,PIB0

K9F5616Q0B-HCB0,HIB0

K9F5608U0B-HCB0,HIB0

K9F5608U0B-PCB0,PIB0

New definition of the number of invalid blocks is added.

Pin assignment of TBGA A3 ball is changed.

(before) N.C --> (after) Vss

Draft Date

Nov. 22.2002

Mar. 6.2003

Mar. 13rd 2003

Apr. 4th 2003

May. 24th 2003

Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.

http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html