K9F5608U0C-PCB0 datasheet(11/39 Pages) SAMSUNG

Part #	K9F5608U0C-PCB0

Description	512Mb/256Mb 1.8V NAND Flash Errata

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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11 / 39 page

K9F5616U0C-YCB0,YIB0,PCB0,PIB0

FLASH MEMORY

10

K9F5616U0C-DCB0,DIB0,HCB0,HIB0

K9F5608U0C-YCB0,YIB0,PCB0,PIB0

K9F5608U0C-DCB0,DIB0,HCB0,HIB0

K9F5608Q0C-DCB0,DIB0,HCB0,HIB0

K9F5616Q0C-DCB0,DIB0,HCB0,HIB0

K9F5608U0C-VCB0,VIB0,FCB0,FIB0

DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)

Parameter

Symbol

Test Conditions

K9F56XXQ0C(1.8V)

K9F56XXU0C(3.3V)

Unit

Min

Typ

Max

Min

Typ

Max

Operat-

ing

Current

Sequential Read

ICC1

tRC=50ns, CE=VIL

IOUT=0mA

-

8

15

-

10

20

mA

Program

ICC2

-

8

15

-

10

25

Erase

ICC3

-

8

15

-

10

25

Stand-by Current(TTL)

ISB1

CE=VIH, WP=0V/VCC

-

1

-

1

Stand-by Current(CMOS)

ISB2

CE=VCC-0.2, WP=0V/VCC

-

10

50

-

10

50

µA

Input Leakage Current

ILI

VIN=0 to Vcc(max)

-

±10

-

±10

Output Leakage Current

ILO

VOUT=0 to Vcc(max)

-

±10

-

±10

Input High Voltage

VIH

I/O pins

VCCQ-0.4

-

VCCQ

+0.3

2.0

-

VCCQ+0.3

V

Except I/O pins

VCC-0.4

-

VCC

+0.3

2.0

-

VCC+0.3

Input Low Voltage, All inputs

VIL

-

-0.3

-

0.4

-0.3

-

0.8

Output High Voltage Level

VOH

K9F56XXQ0C :IOH=-100

µA

K9F56XXU0C :IOH=-400

µA

VCCQ-0.1

-

2.4

-

Output Low Voltage Level

VOL

K9F56XXQ0C :IOL=100uA

K9F56XXU0C :IOL=2.1mA

-

0.1

-

0.4

Output Low Current(R/B)

IOL(R/B)

K9F56XXQ0C :VOL=0.1V

K9F56XXU0C :VOL=0.4V

3

4

-

8

10

-

mA

RECOMMENDED OPERATING CONDITIONS

(Voltage reference to GND, K9F56XXX0C-XCB0

:TA=0 to 70

°C, K9F56XXX0C-XIB0:TA=-40 to 85°C)

Parameter

Symbol

K9F56XXQ0C(1.8V)

K9F56XXU0C(3.3V)

Unit

Min

Typ.

Max

Min

Typ.

Max

Supply Voltage

VCC

1.70

1.8

1.95

2.7

3.3

3.6

V

Supply Voltage

VCCQ

1.70

1.8

1.95

2.7

3.3

3.6

V

Supply Voltage

VSS

0

V

ABSOLUTE MAXIMUM RATINGS

NOTE :

1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.

Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.

2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions

as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Parameter

Symbol

Rating

Unit

K9F56XXQ0C(1.8V)

K9F56XXU0C(3.3V)

Voltage on any pin relative to VSS

VIN/OUT

-0.6 to + 2.45

-0.6 to + 4.6

V

VCC

-0.2 to + 2.45

-0.6 to + 4.6

VCCQ

-0.2 to + 2.45

-0.6 to + 4.6

Temperature Under Bias

K9F56XXX0C-XCB0

TBIAS

-10 to +125

°C

K9F56XXX0C-XIB0

-40 to +125

Storage Temperature

K9F56XXX0C-XCB0

TSTG

-65 to +150

°C

K9F56XXX0C-XIB0

Short Circuit Current

Ios

5

mA

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