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K9F3208W0A-TCB0 Datasheet(PDF) 10 Page - Samsung semiconductor |
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K9F3208W0A-TCB0 Datasheet(HTML) 10 Page - Samsung semiconductor |
10 / 27 page K9F3208W0A-TCB0, K9F3208W0A-TIB0 FLASH MEMORY 10 NAND Flash Technical Notes (Continued) Program Flow Chart Start I/O 6 = 1 ? Write 00h I/O 0 = 0 ? No * If ECC is used, this verification Write 80h Write Address Write Data Write 10h Read Status Register Write Address Wait for tR Time Verify Data No Program Completed or R/B = 1 ? Program Error Yes No Yes * Program Error Yes : If program operation results in an error, map out the block including the page in error and copy the target data to another block. * operation is not needed. Error in write or read operation Over its life time, the additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the actual data.The following possible failure modes should be considered to implement a highly reliable system. In the case of status read fail- ure after erase or program, block replacement should be done. Because program status fail during a page program does not affect the data of the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased empty block and reprogramming the current target data and copying the rest of the replaced block. To improve the efficiency of mem- ory space, it is recommended that the read or verification failure due to single bit error be reclaimed by ECC without any block replacement. The said additional block failure rate does not include those reclaimed blocks. Failure Mode Detection and Countermeasure sequence Write Erase Failure Status Read after Erase --> Block Replacement Program Failure Status Read after Program --> Block Replacement Read back ( Verify after Program) --> Block Replacement or ECC Correction Read Single Bit Failure Verify ECC -> ECC Correction ECC : Error Correcting Code --> Hamming Code etc. Example) 1bit correction & 2bit detection |
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