FLASH MEMORY

2

K9F2808U0B-YCB0,YIB0

K9F2808U0B-DCB0,DIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0

Revision History

The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have

any questions, please contact the SAMSUNG branch office near you.

Revision No.

0.4

0.5

0.6

Remark

Preliminary

History

-min. Value: 7mA -->3mA

-typ. Value: 8mA -->4mA

2. AC parameter is changed.

tRP(min.) : 30ns --> 25ns

1. Parameters are changed in 1.8V part(K9F2808Q0B) .

- tCH is changed from 15ns to 20ns

- tCLH is changed from 15ns to 20ns

- tALH is changed from 15ns to 20ns

- tDH is changed from 15ns to 20ns

1. Parameters are changed in 1.8V part(K9F2808Q0B) .

- tRP is changed from 25ns to 35ns

- tWB is changed from 100ns to 150ns

- tREA is changed from 40ns to 45ns

Draft Date

Nov 5th 2001

Feb 15th 2002

May 3rd 2002

Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.

http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html