K6T1008C2E-GL55 datasheet(6/10 Pages) SAMSUNG

Part #	K6T1008C2E-GL55

Description	128Kx8 bit Low Power CMOS Static RAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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CMOS SRAM

K6T1008C2E Family

Revision 3.0

March 2000

6

Address

Data Out

Previous Data Valid

Data Valid

TIMMING DIAGRAMS

TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS1=OE=VIL, CS2=WE=VIH)

tAA

tRC

tOH

TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)

Data Valid

High-Z

CS1

Address

OE

Data out

NOTES (READ CYCLE)

1.

tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage

levels.

2. At any given temperature and voltage condition,

tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device

interconnection.

CS2

tOH

tAA

tOLZ

tLZ

tOHZ

tHZ(1,2)

tRC

tCO2

tOE

tCO1

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K6T1008C2E-GL55 Datasheet(PDF) 6 Page - Samsung semiconductor

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