K9F1608W0A- datasheet(3/25 Pages) SAMSUNG

Part #	K9F1608W0A-

Description	2M x 8 Bit NAND Flash Memory

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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K9F1608W0A-TCB0, K9F1608W0A-TIB0

FLASH MEMORY

3

256B Column

8B Column

Figure 1. FUNCTIONAL BLOCK DIAGRAM

Figure 2. ARRAY ORGANIZATION

NOTE : A12 to A20 : Block Address

* : X can be VIL or VIH.

I/O 0

I/O 1

I/O 2

I/O 3

I/O 4

I/O 5

I/O 6

I/O 7

1st Cycle

A0

A1

A2

A3

A4

A5

A6

A7

2nd Cycle

A8

A9

A10

A11

A12

A13

A14

A15

3rd Cycle

A16

A17

A18

A19

A20

*X

X-Buffers

16M + 512K Bit

Command

NAND Flash

ARRAY

(256 + 8)Byte x 8192

Y-Gating

Page Register & S/A

I/O Buffers & Latches

Latches

& Decoders

Y-Buffers

Latches

& Decoders

Register

Control Logic

& High Voltage

Generator

Global Buffers

A8 - A20

A0 - A7

Command

CE

RE

WE

CLE ALE WP

I/0 0

I/0 7

16M : 8K Row

(=512 Block)

256Byte

8 bit

8Byte

1 Block(=16 Row)

(4K + 128)Byte

I/O 0 ~ I/O 7

1 Page = 264 Byte

1 Block = 264 B x 16 Pages

= (4K + 128) Bytes

1 Device = 264B x 16Pages x 512 Blocks

= 16.5 Mbits

Column Address

Row Address

(Page Address)

Page Register

VccQ

Vss

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K9F1608W0A- Datasheet(PDF) 3 Page - Samsung semiconductor

K9F1608W0A- Datasheet(HTML) 3 Page - Samsung semiconductor

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