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K6T4008V1C Datasheet(PDF) 2 Page - Samsung semiconductor

Part No. K6T4008V1C
Description  512Kx8 bit Low Power and Low Voltage CMOS Static RAM
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6T4008V1C Datasheet(HTML) 2 Page - Samsung semiconductor

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K6T4008V1C, K6T4008U1C Family
CMOS SRAM
Revision 1.0
January 1999
2
512K
×8 bit Low Power and Low Voltage CMOS Static RAM
GENERAL DESCRIPTION
The K6T4008V1C and K6T4008U1C families are fabricated by
SAMSUNG
′s advanced CMOS process technology. The fami-
lies support various operating temperature range and have var-
ious package type for user flexibility of system design. The
families also support low data retention voltage for battery
back-up operation with low data retention current.
FEATURES
• Process Technology: TFT
• Organization: 512K×8
• Power Supply Voltage
K6T4008V1C Family: 3.0~3.6V
K6T4008U1C Family: 2.7~3.3V
• Low Data Retention Voltage: 2V(Min)
• Three state output and TTL Compatible
• Package Type: 32-SOP-525, 32-TSOP2-400F/R
32-TSOP1-0820F, 32-TSOP1-0813.4F
PIN DESCRIPTION
Name
Function
Name
Function
A0~A18 Address Inputs
Vcc
Power
WE
Write Enable Input
Vss
Ground
CS
Chip Select Input
I/O1~I/O8 Data Inputs/Outputs
OE
Output Enable Input
PRODUCT FAMILY
1. The paramerter is measured with 30pF test load.
Product Family
Operating Temperature
Vcc Range
Speed
Power Dissipation
PKG Type
Standby
(ISB1, Max)
Operating
(ICC2, Max)
K6T4008V1C-B
Commercial(0~70
°C)
3.0~3.6V
701)/85ns
15
µA
30mA
32-SOP
32-TSOP2-F/R
32-TSOP1-F
32-sTSOP1-F
K6T4008U1C-B
2.7~3.3V
701)/85/100ns
K6T4008V1C-F
Industrial(-40~85
°C)
3.0~3.6V
701)/85ns
20
µA
K6T4008U1C-F
2.7~3.3V
701)/85/100ns
FUNCTIONAL BLOCK DIAGRAM
32-SOP
(Forward)
32-TSOP2
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-TSOP2
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
(Reverse)
A18
A17
A17
A18
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
A15
Precharge circuit.
Memory array
1024 rows
512
×8 columns
I/O Circuit
Column select
Clk gen.
Row
select
A2 A3 A8 A9 A10
A13
A11
A0
A1
A4
A5
A6
A7
A14
CS
WE
I/O1
Data
cont
Data
cont
OE
I/O8
A12
A16
A18
A11
A9
A8
A13
WE
A17
A15
VCC
A18
A16
A14
A12
A7
A6
A5
A4
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
32-TSOP1
(Forward)
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A17
Control
logic
32-STSOP1


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