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K6T4008V1C Datasheet(PDF) 6 Page - Samsung semiconductor

Part No. K6T4008V1C
Description  512Kx8 bit Low Power and Low Voltage CMOS Static RAM
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6T4008V1C Datasheet(HTML) 6 Page - Samsung semiconductor

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K6T4008V1C, K6T4008U1C Family
CMOS SRAM
Revision 1.0
January 1999
6
Address
Data Out
Previous Data Valid
Data Valid
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)
tAA
tRC
tOH
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
Data Valid
High-Z
CS
Address
OE
Data out
NOTES (READ CYCLE)
1.
tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device
interconnection.
tOH
tAA
tOLZ
tLZ
tOHZ
tHZ
tRC
tOE
tCO1


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